2SA1444 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn isc & iscsemi is registered trademark 1 isc Silicon PNP Power Transistor 2SA1444
DESCRIPTION
- Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -60V(Min)
- High DC Current Gain- : hFE= 100(Min)@ (VCE= -2V , IC= -3A)
- Low Saturation Voltage- : VCE(sat)= -0.3V(Max)@ (IC= -8A, IB= -0.4A)
APPLICATIONS
- This type of power transistor is developed for high-speed switching and features a high hFE at low VCE(sat),which is ideal for use as a driver in DC/DC converters and actuators. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7.0 V IC Collector Current-Continuous -15 A ICM Collector Current-Pulse -30 A IB Base Current-Continuous -7.5 A PT Total Power Dissipation @TC=25℃ 30 W Total Power Dissipation @Ta=25℃ 2.0 TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn isc & iscsemi is registered trademark 2 isc Silicon PNP Power Transistor 2SA1444
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -8.0A ; IB= -0.8A, L= 1mH -60 V VCEX(SUS) Collector-Emitter Sustaining Voltage IC= -8.0A ; IB1=-IB2= -0.8A, VBE(OFF)=1.5V, L=180μ H,clamped -60 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -8A; IB= -0.4A -0.3 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -12A; IB= -0.6A -0.5 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= -8A; IB= -0.4A -1.2 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= -12A; IB= -0.6A -1.5 V ICBO Collector Cutoff Current VCB= -60V ; IE=0 -10 μ A ICER Collector Cutoff Current VCE= -60V ; RBE= 50Ω ,Ta=125℃ -1.0 mA ICEX Collector Cutoff Current VCE= -60V; VBE(off)= -1.5V VCE= -60V; VBE(off)= -1.5V,Ta=125℃ -10 -1.0 μ A mA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -10 μ A hFE-1 DC Current Gain IC= -1.5A; VCE= -2V 100 hFE-2 DC Current Gain IC= -3A; VCE= -2V 100 400 hFE-3 DC Current Gain IC= -8A; VCE= -2V 60 COB Output Capacitance IE=0; VCB= -10V; f= 1.0MHz 300 pF fT Current-Gain—Bandwidth Product IC=-1.5A ; VCE= -10V 80 MHz Switching times ton Turn-on Time IC= -8A ,RL= 6.3Ω , IB1= -IB2= -0.4A, VCC≈-50V 0.3 μ s tstg Storage Time 1.5 μ s tf Fall Time 0.3 μ s hFE-2 Classifications M L K 100-200 150-300 200-400