2SA1441 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
i., O ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SA1441
DESCRIPTION
- Collector-Emitter Sustaining Voltage- : VcEOfsusr -60V(Min)
- High DC Current Gain- : hFE= 100(Min)@ (VCE= -2V , lc= -1A)
- Low Saturation Voltage- .)= -0.3V(Max)@ (lc= -3A, IB= -0.15A)
APPLICATIONS
- This type of power transistor is developed for high-speed switching and features a high hFE at low VCE(Sat),which is ideal for use as a driver in DC/DC converters and actuators. ABSOLUTE MAXIMUM RATINGS(Ta=25°C) SYMBOL VCBO VCEO VEBO Ic I CM IB PT Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Pulse Base Current-Continuous Total Power Dissipation @Tc=25'C Total Power Dissipation @Ta=25"C Junction Temperature Storage Temperature VALUE -100 -60 -7.0 -5.0 -10 -2.5 2.0 150 -55-150 UNIT V V V A A A W f PIN 1.BASE 2. COLLECTOR 3. EMITTER 1?3 TO-220Fa package O — ^> g ^
- •A • Q ^ ^ ! A , J ' "• H t K V ~~1; DIM A B C D F G H J K L N Q R S g V j *•' a V rj *^o mm WIN 16.85 9.54 4.35 0.75 3.20 6.90 3.80 0,45 13.35 1.10 4.93 4.85 2,55 2.70 1.75 1.30 MAX 17.15 10.10 4.65 0,90 3.40 7.20 4.20 0.75 13.80 1.30 5.18 5.15 3.25 2.90 2.06 1,50 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information turnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time ofgoing to press. However. NJ Setni-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors
Silicon PNP Power Transistor 2SA1441
ELECTRICAL CHARACTERISTICS
Tj=25'C unless otherwise specified SYMBOL VcEO(SUS) VcEX(SUS) VcE(sat)-i VcE(sat)-2 VBE(sat)-i VBE(sat)-2 ICBO ICER ICEX IEBO npE-1 hFE-2 hpE-3 COB fl PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain Output Capacitance Current-Gain — Bandwidth Product CONDITIONS lc= -3.0A ; IB= -0.3A, L= 1mH lc= -3.0A ; IB1=-IB2= -0.3A, VBE<OFF)=1.5V, L=180u H, clamped IC=-3A;IB=-0.15A lc= -4A; IB= -0.2A IC=-3A; IB=-0.15A lc= -4A; IB= -0.2A VCB= -60V ; IE=0 VCE= -60V ; RBE= 50Q ,Ta=125'C VCE= -60V; VBE(0ff)= -1 .5V VCE= -60V; VBE(off)= -1.5V,Ta=125'C VEB= -5V; lc=0 lc= -0.5A ; VOE= -2V lc=-1.0A;VCE=-2V lc= -3.0A ; VCE= -2V lE=0;VCB=-10V;f= 1.0MHz lc=-0.5A;VCE=-10V MIN -60 -60 100 100 TYP. 130 MAX -0.3 -0.5 -1.2 -1.5 -10 -1.0 -10 -1.0 -10 400 UNIT V V V V V V uA mA uA mA u A PF MHz Switching times ton tstg tf Turn-on Time Storage Time Fall Time lc=-3.0A,RL=17n, lBi=-lB2=-0.15A,Vcc*-50V 0.3 1.5 0.3 M S u s u S
- hFE.2 Classifications M 100-200 L 150-300 K 200-400