2SA1440 NJSEMI

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 2

Technical content

J , L/ nc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 2SA1440

DESCRIPTION

  • Collector-Emitter Sustaining Voltage- : VCEo(sus)= -60V(Min)
  • High DC Current Gain- : hFE= 100(Min)@ (VCE= -2V , lc= -0.5A)
  • Low Saturation Voltage- : VCE(sat)= ~0.3V(Max)@ (lc= -2A, IB= -0.1 A)

APPLICATIONS

  • This type of power transistor is developed for high-speed switching and features a high hFE at low VcE(sat),which is ideal for use as a driver in DC/DC converters and actuators. ABSOLUTE MAXIMUM RATINGS(Ta=25-C) PIN 1 BASE 2.COLLECTOR 3.BVHTTER TO-220Fa package SYMBOL VCBO VCEO VEBO Ic I CM IB PT Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Pulse Base Current-Continuous Total Power Dissipation @TC=25'C Total Power Dissipation @Ta=25'C Junction Temperature Storage Temperature VALUE -100 -60 -7.0 -1.5 2.0 150 -55-150 UNIT V V V A A A W i t t
  • *•< 4«" t . « * H T DIM A B C D F G H J K L N Q R S U V mm WIN 16,85 9.54 4.35 0.75 3.20 6.90 3.80 0.45 13.35 1.10 4.98 4.S5 2.55 2.70 1.75 1.30 MAX 17.15 10.10 4.65 0.90 3.40 7.20 4.20 0.75 13.80 1.30 518 5.15 3.25 2.90 2.05 1.50 rf j_ • NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use, NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors

Silicon PNP Power Transistor 2SA1440

ELECTRICAL CHARACTERISTICS

Tj=25°C unless otherwise specified SYMBOL VcEO(SUS) VcEX(SUS) VcE(sat)-1 VcE{sat)-2 VeE(sat)-1 VBE(sat)-2 ICBO ICER ICEX IEBO hpE-1 hFE-2 hFE-3 fl PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain Current-Gain — Bandwidth Product CONDITIONS IC=-2.0A; IB=-0.2A, L= 1mH IC=-2.0A; lBi=-le2= -0.2A, VBE(OFF)= 1 .5V, L=180u H, clamped IC=-2A;IB=-0.1A IC=-3A;IB=-0.15A IC=-2A;IB=-0.1A |C=-3A;IB=-0.15A VCB= -60V; IE=0 Vce= -60V; RBE~ 50Q ,Ta=125°C VCE= -60V; VBE(ofn= -1.5V VCE= -60V; VBE(ofo= -1.5V,Ta=125°C VEB= -5V; lc=0 lc= -0.3A ; VCE= -2V lc= -0.5A ; VCE= -2V lc= -2.0A ; VCE= -2V IC=-0.3A;VCE=-10V MIN -60 -60 100 100 TYP. MAX -0.3 -0.5 -1.2 -1.5 -10 -1.0 -10 -1.0 -10 400 UNIT V V V V V V uA mA u A mA MA MHz hFE.2 Classifications M 100-200 L 150-300 K 200-400