2SA1419-HF_15 KEXIN

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  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 3

Technical content

Features

Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Electrical Characteristics Ta = 25 1.Base 2.Collector 3.Emitter 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -180 Collector- emitter breakdown voltage VCEO Ic= -1 mA， RBE=∞ -160 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -6 Collector-base cut-off current ICBO VCB= -120 V , IE=0 -1 Emitter cut-off current IEBO VEB= -4V , IC=0 -1 Collector-emitter saturation voltage VCE(sat) IC=-500mA, IB=- 25mA -0.2 -0.5 Base - emitter saturation voltage VBE(sat) IC=-500mA, IB=- 25mA -0.85 -1.2 VCE= -5V, IC= -100mA 100 400 VCE= -5V, IC= -10mA 80 Turn-on time ton 40 Storage time ts 700 Fall time tf 40 Output capacitance Cob VCB= -10V, IE= 0,f=1MHz 22 pF Transition frequency fT VCE= -10V, IE= -50mA 120 MHz DC current gain hFE See Test Circuit. V V ns uA Parameter Symbol Rating Unit Collector - Base Voltage VCBO -180 Collector - Emitter Voltage VCEO -160 Emitter - Base Voltage VEBO -6 Collector Current - Continuous IC -1.5 Collector Current - Pulsed ICP -2.5 Collector Power Dissipation PC 500 mW Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 V A ■ Classification of hfe

  • Complementary to 2SC3649-HF Type 2SA1419-R-HF 2SA1419-S-HF 2SA1419-T-HF Range 100-200 140-280 200-400 Marking AER* F AES* F AET* F
  • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish PNP Transistors 2SA1419-HF

www.kexin.com.cn2 SMD Type Transistors Test Circuit INPUT 100V 50Ω RL 100μF 470μF --5V IC=10IB1=--10IB2=0.7A (For PNP, the polarity is reversed) + + VR PW=20μs D.C.≤1% RB IB1 IB2 ■ Typical Characterisitics PNP Transistors 2SA1419-HF

www.kexin.com.cn 3 SMD Type Tran sistors ■ Typical Characterisitics PNP Transistors 2SA1419-HF