2SA1419_10 SANYO

Document overview

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Technical content

Features

  • Adoption of FBET, MBIT processes.
  • High breakdown voltage and large current capacity.
  • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s. Specifications ( ) : 2SA1419 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (- -)180 V Collector-to-Emitter Voltage VCEO (- -)160 V Emitter-to-Base Voltage VEBO (- -)6 V Collector Current IC (- -)1.5 A Collector Current (Pulse) ICP (- -)2.5 A Collector Dissipation PC 500 mW Mounted on a ceramic board (250mm2✕0.8mm) 1.5 W Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C Marking 2SA1419 : AE 2SC3649 : CE www.semiconductor-sanyo.com/network 31010CB TK IM / O3103TN (KT)/71598HA (KT)/4277TA, TS Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer 's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer 's products or equipment. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. SANYO Semiconductors DATA SHEET 2SA1419 / 2SC3649 PNP / NPN Epitaxial Planar Silicon Transistors High-Voltage Switching Applications http://semicon.sanyo.com/en/network

No.2007-2/5 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unitmin typ max Collector Cutoff Current I CBO VCB=(- -)120V, IE=0A (- -)1 μA Emitter Cutoff Current I EBO VEB=(- -)4V, IC=0A (- -)1 μA DC Current Gain hFE1V CE=(- -)5V, IC=(- -)100mA 100* 400* hFE2V CE=(- -)5V, IC=(- -)10mA 80 Gain-Bandwidth Product f T VCE=(- -)10V, IC=(- -)50mA 120 MHz Output Capacitance Cob V CB=(- -)10V, f=1MHz (22)14 pF Collector-to-Emitter Saturation Voltage V CE(sat) I C=(- -)500mA, IB=(- -)50mA (- -200)130 (- -500)450 mV Base-to-Emitter Saturation Voltage V BE(sat) I C=(- -)500mA, IB=(- -)50mA (- -)0.85 (- -)1.2 V Collector-to-Base Breakdown Voltage V (BR)CBO IC=(- -)10μA, IE=0A (- -)180 V Collector-to-Emitter Breakdown Voltage V (BR)CEO IC=(- -)1mA, RBE=∞ (- -)160 V Emitter-to-Base Breakdown Voltage V (BR)EBO IE=(- -)10μA, IC=0A (- -)6 V Turn-ON Time t on See specified Test Circuit. (40)40 ns Storage Time t stg See specified Test Circuit. (0.7)1.2 μs Fall Time t f See specified Test Circuit. (40)80 ns *: The 2SA1419 / 2SC3649 are classified by 100mA hFE as follows: Rank R S T hFE 100 to 200 140 to 280 200 to 400 Package Dimensions Switching Time Test Circuit unit : mm (typ) 7007B-004 INPUT 100V 50Ω RL 100μF 470 μF --5V IC=10IB1=--10IB2=0.7A (For PNP, the polarity is reversed) + + VR PW=20μs D.C.≤1% RB IB1 IB2

No.2007-3/5 IC -- VCE IC -- VCE IC -- VCE IC -- VCE Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A hFE -- IC hFE -- IC Collector Current, IC -- A DC Current Gain, hFE Collector Current, IC -- A DC Current Gain, hFE IC -- VBE IC -- VBE Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- A Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- A ITR03571 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --0.2 --0.6 --0.4 --0.8 --1.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.2 0.6 0.4 0.8 1.0 ITR03572 10 20 30 40 500 ITR03574ITR03573 --40mA --60mA--80mA --20mA --10mA --5mA --2mA --1mA IB=0mA 2SA1419 2SC3649 2SC3649 IB=0mA IB=0mA 2SA1419 20mA 50mA 30mA 40mA 10mA 5mA 2mA 1mA --2.5mA --2.0mA --3.0mA --3.5mA --5.0mA --4.0mA --4.5mA --1.5mA --1.0mA --0.5mA IB=0mA 0.5mA 5.0 mA 4.5 mA 2.5mA 3.5mA 4.0mA 2.0mA 3.0mA 1.5mA 1.0mA ITR03578ITR03577 ITR03575 --0.4 --0.8 --1.6 --1.2 0.4 0.8 1.6 1.2 100 1000 5773 20.01 0.1 57323 21.0 100 1000 ITR03576 2SA1419 VCE=--5V 2SC3649 VCE=5V 2SA1419 VCE=--5V 2SC3649 VCE=5V --25 Ta=75 --25°C 25°C Ta=75°C --25 Ta=75 --25°C 25°C Ta=75°C

No.2007-4/5 fT -- IC Cob -- VCB Collector Current, IC -- A Gain-Bandwidth Product, fT -- MHz Collector-to-Base V oltage, VCB -- V Output Capacitance, Cob -- pF A S O PC -- Ta Collector Current, IC -- A Collector-to-Emitter V oltage, VCE -- V Collector Dissipation, PC -- W Ambient Temperature, Ta -- °C VCE(sat) -- IC VCE(sat) -- IC Collector Current, IC -- A Collector-to-Emitter Saturation V oltage, VCE(sat) -- mV Collector Current, IC -- A Collector-to-Emitter Saturation V oltage, VCE(sat) -- mV VBE(sat) -- IC VBE(sat) -- IC Collector Current, IC -- A Collector Current, IC -- A Base-to-Emitter Saturation V oltage, VBE(sat) -- V Base-to-Emitter Saturation V oltage, VBE(sat) -- V ITR03580ITR03579 20.01 573 0.1 22 573 1.0 100 21.0 573 10 25 7 3 100 100 --1000 --100 ITR03581 1000 100 ITR03582 2SC3649 IC / IB=10 2SA1419 IC / IB=10 --25°C 25°C Ta=75°C --25°C 25°C Ta=75°C 2SA1419 2SC3649 2SA1419 2SC3649 2SA1419 / 2SC3649 2SA1419 / 2SC3649 ITR03583 --1.0 --10 0.01 0.1 1.0 1.073 2 1.0 0.2 0.4 0.6 0.8 1.8 1.6 1.4 1.2 1.0 0 20 80 100 6040 160 140120 ITR03584 ITR03585 Mounted on a ceramic board (250mm 2✕0.8mm) No heat sink 7 1053 23 27 1005 ITR03586 1ms10ms100 ms DC operation For PNP, minus sign is omitted Single pulse Ta=25°C Mounted on a ceramic board (250mm2✕0.8mm) 2SA1419 IC / IB=10 2SC3649 IC / IB=10 25°C 75°C Ta=--25°C 25°C 75°C Ta=--25°C 2SA1419 / 2SC3649 2SA1419 / 2SC3649ICP=2.5A IC=1.5A For PNP, minus sign is omitted For PNP, minus sign is omitted

No.2007-5/5 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. PS This catalog provides information as of March, 2010. Specifications and information herein are subject to change without notice.