2SA1418_10 SANYO

Document overview

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Technical content

Features

  • Adoption of FBET, MBIT processes.
  • High breakdown voltage and large current capacity.
  • Fast switching speed.
  • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s. Specifications ( ) : 2SA1418 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (- -)180 V Collector-to-Emitter Voltage VCEO (- -)160 V Emitter-to-Base Voltage VEBO (- -)6 V Collector Current IC (- -)0.7 A Collector Current (Pulse) ICP (- -)1.5 A Collector Dissipation PC 500 mW Mounted on a ceramic board (250mm2✕0.8mm) 1.3 W Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C Marking 2SA1418 : AD 2SC3648 : CD www.semiconductor-sanyo.com/network 31010CB TK IM / O3103TN (KT)/71598HA (KT)/3277KI/2255MW, TS Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer 's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer 's products or equipment. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. SANYO Semiconductors DATA SHEET 2SA1418 / 2SC3648 PNP / NPN Epitaxial Planar Silicon Transistors High-Voltage Switching, Preriver Applications

No.1788-2/5 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unitmin typ max Collector Cutoff Current I CBO VCB=(- -)120V, IE=0A (- -)0.1 μA Emitter Cutoff Current I EBO VEB=(- -)4V, IC=0A (- -)0.1 μA DC Current Gain hFE1V CE=(- -)5V, IC=(- -)100mA 100* 400* hFE2V CE=(- -)5V, IC=(- -)10mA 90 Gain-Bandwidth Product f T VCE=(- -)10V, IC=(- -)50mA 120 MHz Output Capacitance Cob V CB=(- -)10V, f=1MHz (11)8 pF Collector-to-Emitter Saturation Voltage V CE(sat) I C=(- -)250mA, IB=(- -)25mA (- -0.2)0.12 (- -0.5)0.4 V Base-to-Emitter Saturation Voltage V BE(sat) I C=(- -)250mA, IB=(- -)25mA (- -)0.85 (- -)1.2 V Collector-to-Base Breakdown Voltage V (BR)CBO IC=(- -)10μA, IE=0A (- -)180 V Collector-to-Emitter Breakdown Voltage V (BR)CEO IC=(- -)1mA, RBE=∞ (- -)160 V Emitter-to-Base Breakdown Voltage V (BR)EBO IE=(- -)10μA, IC=0A (- -)6 V Turn-ON Time t on See specified Test Circuit. (60)50 ns Storage Time t stg See specified Test Circuit. (900)1000 ns Fall Time t f See specified Test Circuit. (60)60 ns *: The 2SA1418 / 2SC3648 are classified by 100mA hFE as follows: Rank R S T hFE 100 to 200 140 to 280 200 to 400 Package Dimensions Switching Time Test Circuit unit : mm (typ) 7007B-004 INPUT 100V 50Ω 100μF 470 μF --5V IC=20IB1=--20IB2=300mA (For PNP, the polarity is reversed) + + VR PW=20μs D.C.≤1% 333Ω RB IB1 IB2

No.1788-3/5 IC -- VCE Collector Current, IC -- mA Collector-to-Emitter V oltage, VCE -- mV IC -- VCE Collector Current, IC -- mA Collector-to-Emitter V oltage, VCE -- mV VCE(sat) -- IC Collector Current, IC -- mA Collector-to-Emitter Saturation V oltage, VCE(sat) -- V IC -- VBE Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- mA hFE -- IC Collector Current, IC -- mA DC Current Gain, hFE IC -- VCE Collector Current, IC -- mA Collector-to-Emitter V oltage, VCE -- V IC -- VCE Collector Current, IC -- mA Collector-to-Emitter V oltage, VCE -- V hFE -- IC Collector Current, IC -- mA DC Current Gain, hFE ITR03565ITR03564 2--10 5773 2 --100 2--100057353 1000 100 210 5773 2 100 2100057353 1000 100 ITR03563ITR03562 ITR03560 200 800 1000 600 400 5735732 5 7 3210 100 21000 1.0 0.1 ITR03561 2SA1418 / 2SC3648 VCE=5V For PNP, minus sign is omitted 2SA1418 Pulse 2SA14182SC3648 VCE =--2V 2SA1418 --2.5mA --2.0mA --3.0mA mA --3.5mA --1.5mA --1.0mA --0.5mA IB=0mA --100 --200 --400 --300 --600 --500 --700 --800 02 0 3 010 50 60 70 40 800 200 400 600 800 1000 2SC3648 IB=0mA 0.5mA 2.5mA 3.0mA 4.0 mA 3.5mA 2.0mA 1.5mA 1.0mA 2SA1418 2SC3648 2SA1418 / 2SC3648 IC / IB=10 For PNP, minus sign is omitted --5V --10 V 2SC3648 Pulse VCE =2V5V V ITR03558 0 --400 --200 --800 --600 --1000 400 200 800 600 100000 --100 --200 --400 --300 --600 --500 --700 --800 100 200 400 300 600 500 700 800 ITR03559 --80mA--100mA --140mA --180mA --200mA --40mA --60mA --20mA IB=0mA 2SA1418 2SC3648 IB=0mA 80mA 90mA 30mA 20mA 10mA 40mA 50mA--160mA --120mA 100mA 60mA 70mA From top From top

No.1788-4/5 PC -- Ta Ambient Temperature, Ta -- °C Collector Dissipation, PC -- W A S O Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A fT -- IC Gain-Brandwidth Product, fT -- MHz Collector-to-Base V oltage, VCB -- V Output Capacitance, Cob -- pF fT -- IC Collector Current, IC -- mACollector Current, IC -- mA Cob -- VCB ITR03568 1.0 100 0.01 0.1 1.0 101.0 5732 10057322 1.0 32 1.6 1.4 1.8 1.2 0.8 0.4 0.2 0.6 1.0 006 0 8 0 4020 140 120100 160 ITR03569 ITR03570 Mounted on a ceramic board (250mm 2✕0.8mm) No heat sink 7 1053 23 275 100 For PNP, minus sign is omitted 2SA1418 2SC3648 2SA1418 / 2SC3648 f=1MHz 1ms10ms100 ms DC operation 2SA1418 / 2SC3648 2--1075 --1007532 --1000753 100 21075 1007532 1000753 100 ITR03566 ITR03567 2SC36482SA1418 VCE=5V 10V VCE=10V ICP=1.5A IC=0.7A Ta=25°C Single pulse Mounted on a ceramic board (250mm2✕0.8mm) For PNP, minus sign is omitted Gain-Brandwidth Product, fT -- MHz

No.1788-5/5 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. PS This catalog provides information as of March, 2010. Specifications and information herein are subject to change without notice.