2SA1417_12 SANYO

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 7

Technical content

Features

  • Adoption of FBET, MBIT processes
  • High breakdown voltage and large current capacity
  • Fast switching speed
  • Ultrasmall size making it easy to provide high-density small-sized hybrid ICs Specifi cations ( ) : 2SA1417 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V CBO (- -)120 V Collector-to-Emitter Voltage V CEO (- -)100 V Emitter-to-Base Voltage V EBO (- -)6 V Collector Current I C (- -)2 A Collector Current (Pulse) I CP (- -)3 A Collector Dissipation P C 500 mW When mounted on ceramic substrate (250mm ×0.8mm) 1.5 W Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C Package Dimensions unit : mm (typ) 7007B-004

90512 TKIM/22006EA MSIM/O3103TN (KT)/71598HA (KT)/3277KI/N255MW, TS

http://www.sanyosemi.com/en/network/ Product & Package Information

  • Package : PCP
  • JEITA, JEDEC : SC-62, SOT-89, TO-243 Minimum Packing Quantity : 1,000 pcs./reel Packing Type: TD Marking Electrical Connection TD 1 : Base 2 : Collector 3 : Emitter SANYO : PCP 2.5 4.0 1.0 1.5 0.5 0.4 3.0 4.5 1.6 0.4 12 3 1.5 0.75 Top View Bottom View 2SA1417S-TD-E 2SA1417T-TD-E 2SC3647S-TD-E 2SC3647T-TD-E AC LOT No. CC LOT No. 2SC36472SA1417 RANK RANK 2SC3647 2SA1417 2SA1417/2SC3647 PNP / NPN Epitaxial Planar Silicon Transistor High-Voltage Switching

Applications

No.2006-2/7 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Collector Cutoff Current I CBO VCB=(- -)100V, IE=0A (- -)100 nA Emitter Cutoff Current I EBO VEB=(- -)4V, IC=0A (- -)100 nA DC Current Gain h FE VCE=(- -)5V, IC=(- -)100mA 100* 400* Gain-Bandwidth Product f T VCE=(- -)10V, IC=(- -)100mA 120 MHz Output Capacitance Cob V CB=(- -)10V, f=1MHz (25)16 pF Collector-to-Emitter Saturation Voltage V CE(sat) I C=(- -)1A, IB=(- -)100mA (- -0.22)0.13 (- -0.6)0.4 V Base-to-Emitter Saturation Voltage V BE(sat) I C=(- -)1A, IB=(- -)100mA (- -)0.85 (- -)1.2 V Collector-to-Base Breakdown Voltage V (BR)CBO IC=(- -)10μA, IE=0A (- -)120 V Collector-to-Emitter Breakdown Voltage V (BR)CEO IC=(- -)1mA, RBE=∞ (- -)100 V Emitter-to-Base Breakdown Voltage V (BR)EBO IE=(- -)10μA, IC=0A (- -)6 V Turn-On Time t on See specifi ed Test Circuit. (80)80 ns Storage Time t stg (750)1000 ns Fall Time t f (40)50 ns * : The 2SA1417 / 2S3647 are classifi ed by 100mA hFE as follws : Rank R S T hFE 100 to 200 140 to 280 200 to 400 Switching Time Test Circuit

Ordering Information

Device Package Shipping memo 2SA1417S-TD-E PCP 1,000pcs./reel Pb Free 2SA1417T-TD-E PCP 1,000pcs./reel 2SC3647S-TD-E PCP 1,000pcs./reel 2SC3647T-TD-E PCP 1,000pcs./reel VR RB VCC=50VVBE= --5V + +50Ω INPUT OUTPUT RL 100μF 470 μF PW=20μs IB1 D.C.≤1% IB2 IC=10IB1= --10IB2=0.7A For PNP, the polarity is reversed.

No.2006-3/7 IC -- VCE IC -- VCE Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A ITR03542 --0.4 --0.8 --1.2 --1.6 --2.0 0.4 0.8 1.2 1.6 2.0 ITR03543 --20mA --30mA --10mA --5mA --3mA --2mA --1mA IB=0mA 2SA1417 2SC3647 IB=0mA 20mA 30mA 50mA 40mA 10mA 5mA 3mA 2mA 1mA --40mA ITR03549ITR03548 ITR03546 --0.8 --0.4 --1.2 --1.6 --2.4 --2.0 0.8 0.4 1.2 1.6 2.4 2.0 100 1000 100 1000 5773 20.01 0.1 57323 21.0 ITR03547 2SA1417 VCE= --5V 2SC3647 VCE=5V 2SA1417 VCE= --5V 2SC3647 VCE=5V --25 Ta=75 --25°C 25°C Ta=75°C --25 Ta=75 --25°C 25°C Ta=75°C --0.2 --0.6 --0.4 --0.8 --1.0 0.2 0.6 0.4 0.8 1.0 10 20 30 40 500 ITR03545ITR03544 2SC3647 IB=0mA 2SA1417 --6mA --5mA --4mA --3mA --2mA --1mA IB=0mA 0.5mA 2.5mA 3.0mA 3.5mA 4.0mA 2.0mA 1.5mA 1.0mA hFE -- IC hFE -- IC IC -- VBEIC -- VBE Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- A Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- A Collector Current, IC -- A DC Current Gain, hFE Collector Current, IC -- A DC Current Gain, hFE IC -- VCE IC -- VCE Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A 4.5mA 5.0mA

No.2006-4/7 ITR03551ITR03550 20.01 5773 0.1 25 7 32 3 1.0 100 21.0 5773 2 2 10 573 100 100 2SA1417 2SC3647 2SA1417 2SC3647 2SA1417 / 2SC3647 VCE=10V 2SA1417 / 2SC3647 f=1MHz Cob -- VCB Collector-to-Base V oltage, VCB -- V Output Capacitance, Cob -- pF For PNP minus sign is omitted.For PNP minus sign is omitted. fT -- IC Collector Current, IC -- A Gain-Bandwidth Product, fT -- MHz IT10757 0.2 0.4 0.5 0.6 0.8 1.8 1.6 1.4 1.5 1.2 1.0 0 20 80 100 6040 160 140120 2SA1417 / 2SC3647 ITR03554 --1.0 --10 0.01 0.1 1.0 1.0 7 0.01 0.1 5732 1.057323 2 7 1.053 22 ITR03555 ITR03556 7 1053 27 1005 ICP=3A IC=2A 1ms 10ms 100ms DC operation 25°CTa= --25°C 75°C 2SC3647 IC / IB=10 2SA1417 IC / IB=10 25°CTa= --25°C 75°C --1000 --100 --10 ITR03552 100 1000 ITR03553 2SC3647 IC / IB=10 2SA1417 IC / IB=10 --25°C 25°C Ta=75 --25°C 25°CTc=75°C 2SA1417 / 2SC3647 VBE(sat) -- IC VBE(sat) -- IC VCE(sat) -- ICVCE(sat) -- IC Collector Current, IC -- A Collector Current, IC -- A Base-to-Emitter Saturation V oltage, VBE(sat) -- V Base-to-Emitter Saturation V oltage, VBE(sat) -- V Collector Current, IC -- A Collector-to-Emitter Saturation V oltage, VCE(sat) -- mV Collector Current, IC -- A Collector-to-Emitter Saturation V oltage, VCE(sat) -- mV A S O For PNP minus sign is omitted. Ta=25°C Single pulse Mounted on a ceramic board (250mm2✕0.8mm) PC -- Ta Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A Mounted on a ceramic boa rd (250mm 2✕0.8mm) Ambient Temperature, Ta -- °C Collector Dissipation, PC -- W Infinite heat si nk

No.2006-5/7 Embossed Taping Specifi cation 2SA1417S-TD-E, 2SA1417T-TD-E, 2SC3647S-TD-E, 2SC3647T-TD-E

No.2006-6/7 Outline Drawing Land Pattern Example 2SA1417S-TD-E, 2SA1417T-TD-E, 2SC3647S-TD-E, 2SC3647T-TD-E Mass (g) Unit 0.058 * For reference mm Unit: mm 2.2 1.0 1.8 1.5 0.9 3.7 1.5 3.0 1.0 45° 45°

PS No.2006-7/7 This catalog provides information as of September, 2012. Specifi cations and information herein are subject to change without notice. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer 's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer 's products or equipment. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a confirmation. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.