2SA1416_15 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Features
Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Fast Switching Time Absolute Maximum Ratings Ta = 25 Electrical Characteristics Ta = 25 PNP Transistors 2SA1416 1.Base 2.Collector 3.Emitter 1.70 0.1 0.42 0.1 0.46 0.1 Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -120 Collector- emitter breakdown voltage VCEO Ic= -1 mA， RBE=∞ -100 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -6 Collector-base cut-off current ICBO VCB= -100 V , IE=0 -0.1 Emitter cut-off current IEBO VEB= -4V , IC=0 -0.1 Collector-emitter saturation voltage VCE(sat) IC=-400mA, IB=- 40mA -0.2 -0.6 Base - emitter saturation voltage VBE(sat) IC=-400mA, IB=- 40mA -0.85 -1.2 DC current gain hFE VCE= -5V, IC= -100mA 100 400 Turn-on time ton 80 Storage time ts 700 Fall time tf 40 Output capacitance Cob VCB= -10V, IE= 0,f=1MHz 13 pF Transition frequency fT VCE= -10V, IE= -100mA 120 MHz See Test Circuit. V V ns uA Parameter Symbol Rating Unit Collector - Base Voltage VCBO -120 Collector - Emitter Voltage VCEO -100 Emitter - Base Voltage VEBO -6 Collector Current - Continuous IC -1 Collector Current - Pulsed ICP -2 Collector Power Dissipation PC 500 mW Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 V A ■ Classification of hfe
- Complementary to 2SC3646 Type 2SA1416-R 2SA1416-S 2SA1416-T Range 100-200 140-280 200-400 Marking ABR* ABS* ABT*
www.kexin.com.cn2 SMD Type Transistors Test Circuit PNP Transistors 2SA1416 ■ Typical Characterisitics INPUT 50V 50Ω RL 100μF 470μF --5V IC=10IB1=--10IB2=400mA (For PNP, the polarity is reversed) + + VR PW=20μs D.C.≤1% RB IB1 IB2
www.kexin.com.cn 3 SMD Type Transistors ■ Typical Characterisitics PNP Transistors 2SA1416 2SA1416