2SA1416 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Features
Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Fast Switching Time Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage V CBO -120 V Collector-Emitter Voltage V CEO -100 V Emitter-Base Voltage V EBO -6 V Collector Current I C -1 A Collector Current (Pulse) I CP -2 A PC 500 mW PC* 1.3 W Jumction temperature T j 150 Storage temperature Range T stg - 5 5t o+ 1 5 0 * Mounted on ceramic board (250 mm2 x 0.8 mm) Collector Power Dissipation Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector Cut-off Current I CBO VCB = -100V , IE = 0 -100 nA Emitter Cut-off Current I EBO VEB =- 4 V,IC = 0 -100 nA Collector-Base Breakdown Voltage V (BR)CBO IC = -10uA , IE = 0 -120 V Collector-Emitter Breakdown Voltage V (BR)CEO IC =- 1 m A,RBE = -100 V Emitter-Base Breakdown Voltage V (BR)EBO IE = -10uA , IC =0 - 6 V DC Current Gain h FE VCE =- 5 V,IC = -100mA 100 400 Collector-Emitter Saturation Voltage V CE(sat) IC = -400mA , IB = -40mA -0.2 -0.6 V Base-Emitter Saturation Voltage V BE(sat) IC = -400mA , IB = -40mA -0.85 -1.2 V Gain-Bandwidth Product f T VCE = -10V , IC = -100mA 120 MHz Collector Output Capacitance C ob VCB = -10V , IE = 0 , f = 1MHz 13 pF Turn-On Time t on 80 Storage Time t stg 700 Fall Time t f 40 nsSee Test Circuit.
www.kexin.com.cn2 SMD Type Transistors Electrical Characteristics Curves Test Circuit 2SA1416 hFE Classification Marking Rank R S T hFE 100 200 140 280 200 400 AB
www.kexin.com.cn 3 SMD Type Transistors 2SA1416