2SA1416_10 SANYO

Document overview

  • Manufacturer or author: Provided By digicamel.com
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Technical content

Features

  • Adoption of FBET, MBIT processes.
  • High breakdown voltage and large current capacity.
  • Fast switching speed.
  • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s. Specifications ( ) : 2SA1416 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (- -)120 V Collector-to-Emitter Voltage VCEO (- -)100 V Emitter-to-Base Voltage VEBO (- -)6 V Collector Current IC (- -)1 A Collector Current (Pulse) ICP (- -)2 A Collector Dissipation PC 500 mW Mounted on a ceramic board (250mm2✕0.8mm) 1.3 W Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C Marking 2SA1416 : AB 2SC3646 : CB www.semiconductor-sanyo.com/network 31010EA TK IM / O3103TN (KT)/71598HA (KT)/3277KI/N255MW, TS Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer 's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer 's products or equipment. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. SANYO Semiconductors DATA SHEET 2SA1416 / 2SC3646 PNP / NPN Epitaxial Planar Silicon Transistors High-Voltage Switching Applications

No.2005-2/5 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unitmin typ max Collector Cutoff Current I CBO VCB=(- -)100V, IE=0A (- -)100 nA Emitter Cutoff Current I EBO VEB=(- -)4V, IC=0A (- -)100 nA DC Current Gain h FE VCE=(- -)5V, IC=(- -)100mA 100* 400* Gain-Bandwidth Product f T VCE=(- -)10V, IC=(- -)100mA 120 MHz Output Capacitance Cob V CB=(- -)10V, f=1MHz (13)8.5 pF Collector-to-Emitter Saturation Voltage V CE(sat) I C=(- -)400mA, IB=(- -)40mA (- -0.2)0.1 (- -0.6)0.4 V Base-to-Emitter Saturation Voltage V BE(sat) I C=(- -)400mA, IB=(- -)40mA (- -)0.85 (- -)1.2 V Collector-to-Base Breakdown Voltage V (BR)CBO IC=(- -)10μA, IE=0A (- -)120 V Collector-to-Emitter Breakdown Voltage V (BR)CEO IC=(- -)1mA, RBE=∞ (- -)100 V Emitter-to-Base Breakdown Voltage V (BR)EBO IE=(- -)10μA, IC=0A (- -)6 V Turn-ON Time t on See specified Test Circuit. (80)80 ns Storage Time t stg See specified Test Circuit. (700)850 ns Fall Time t f See specified Test Circuit. (40)50 ns *: The 2SA1416 / 2SC3646 are classified by 100mA hFE as follows: Rank R S T hFE 100 to 200 140 to 280 200 to 400 Package Dimensions Switching Time Test Circuit unit : mm (typ) 7007B-004 INPUT 50V 50Ω RL 100μF 470 μF --5V IC=10IB1=--10IB2=400mA (For PNP, the polarity is reversed) + + VR PW=20μs D.C.≤1% RB IB1 IB2

No.2005-3/5 IC -- VCE IC -- VCE IC -- VCE IC -- VCE Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- mA Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- mA hFE -- IC hFE -- IC Collector Current, IC -- A DC Current Gain, hFE Collector Current, IC -- A DC Current Gain, hFE IC -- VBE IC -- VBE Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- A Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- A ITR03526 --0.2 --0.4 --0.6 --0.8 --1.0 --100 --300 --200 --400 --500 0.2 0.4 0.6 0.8 1.0 100 300 200 400 500 ITR03527 10 20 30 40 500 ITR03529ITR03528 --15mA --20 mA --30 mA --25 mA --10mA --5mA --3mA --2mA --1mA IB=0mA 2SA1416 2SC3646 2SC3646 IB=0mA IB=0mA 2SA1416 15mA 20mA30mA 25mA 10mA 5mA 3mA 2mA 1mA --2.5mA --2.0mA --1.5mA --1.0mA --0.5mA IB=0mA 0.5mA 2.5 mA 2.0mA 1.5mA 1.0mA ITR03533ITR03532 ITR03530 --0.4 --0.2 --0.6 --0.8 --1.2 --1.0 0.4 0.2 0.6 0.8 1.2 1.0 100 1000 5773 20.01 0.1 57323 21.0 100 1000 ITR03531 2SA1416 VCE=--5V 2SC3646 VCE=5V 2SA1416 VCE=--5V 2SC3646 VCE=5V --25 Ta=75 --25°C 25°C Ta=75°C --25 Ta=75 --25°C 25°C Ta=75°C

No.2005-4/5 fT -- IC Cob -- VCB Collector Current, IC -- A Gain-Bandwidth Product, fT -- MHz Collector-to-Base V oltage, VCB -- V Output Capacitance, Cob -- pF A S O PC -- Ta Collector Current, IC -- A Collector-to-Emitter V oltage, VCE -- V Collector Dissipation, PC -- W Ambient Temperature, Ta -- °C VCE(sat) -- IC VCE(sat) -- IC Collector Current, IC -- A Collector-to-Emitter Saturation V oltage, VCE(sat) -- mV Collector Current, IC -- A Collector-to-Emitter Saturation V oltage, VCE(sat) -- mV VBE(sat) -- IC VBE(sat) -- IC Collector Current, IC -- A Collector Current, IC -- A Base-to-Emitter Saturation V oltage, VBE(sat) -- V Base-to-Emitter Saturation V oltage, VBE(sat) -- V ITR03534 100 0.01 0.1 1.0 7 0.01 0.1 5732 1.05732 7 1.053 22 100 0.2 0.5 0.4 0.6 0.8 1.6 1.3 1.4 1.2 1.0 7 1.0 10 57325 7 32 100 2 0 20 80 100 6040 160 140120 ITR03535 ITR03540 Mounted on a ceramic board (250mm 2✕0.8mm) No heat sink 7 1053 27 1005 ITR03541 2SA1416 / 2SC3646 2SA1416 / 2SC3646 f=1MHz 2SA1416 2SC3646 2SA1416 2SC3646 2SA1416 / 2SC3646 VCE=10V 1ms10ms100 msDC operation For PNP, minus sign is omitted 2SA1416 / 2SC3646 Single pulse Ta=25°C Mounted on a ceramic board (250mm2✕0.8mm) ICP=2A IC=1A ITR03539ITR03538 --1.0 --10 20.01 5773 2 2 0.1 573 1.0 1.0 --1000 --100 ITR03536 100 1000 ITR03537 2SC3646 IC / IB=10 2SA1416 IC / IB=10 2SA1416 IC / IB=10 75°C25°C Ta=--25°C --25°C 25°C 75°C25°C Ta=--25°C 2SC3646 IC / IB=10 Ta=75 --25°C25°C Ta=75°C For PNP, minus sign is omitted For PNP, minus sign is omitted

No.2005-5/5 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. PS This catalog provides information as of March, 2010. Specifications and information herein are subject to change without notice.