2SA1415 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Features
High Breakdown Voltage (VCEO =1 6 0 V ) Excellent Linearlity of hFE and Small Cob Fast Switching Speed Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage V CBO -180 V Collector-Emitter Voltage V CEO -160 V Emitter-Base Voltage V EBO -5 V Collector Current I C -140 mA Collector Current (Pulse) I CP -200 mA PC 500 mW PC* 1.3 W Jumction temperature T j 150 Storage temperature Range T stg - 5 5t o+ 1 5 0 * Mounted on ceramic board (250 mm2 x 0.8 mm) Collector Power Dissipation Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector Cut-off Current I CBO VCB = -80V , IE = 0 -100 nA Emitter Cut-off Current I EBO VEB =- 4 V,IC = 0 -100 nA DC Current Gain h FE VCE =- 5 V,IC = -10mA 100 400 Collector-Emitter Saturation Voltage V CE(sat) IC = -50mA , IB = -5mA -0.14 -0.4 V Gain-Bandwidth Product f T VCE = -10V , IC = -10mA 150 MHz Collector Output Capacitance C ob VCB = -10V , IE =0,f=1 M H z 4 p F Turn-On Time t on 0.1 Storage Time t stg 1.5 Fall Time t f 0.1 ìsSee Test Circuit.
www.kexin.com.cn2 SMD Type Transistors Electrical Characteristics Curves 2SA1415 Test Circuit hFE Classification Marking Rank R S T hFE 100 200 140 280 200 400 AA
www.kexin.com.cn 3 SMD Type Transistors 2SA1415