2SA1411_15 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 1
Technical content
Features
Very high DC current gain:hFE=500 to 1600. High VEBO Voltage:VEBO=-10V Absolute Maximum Ratings Ta = 25 tinUgnitaRlobmySretemaraP Vegatlovesab-rotcelloC CBO -25 V Vegatlovrettime-rotcelloC CEO -25 V Vegatlovesab-rettimE EBO -10 V ItnerrucrotcelloC C -150 mA Total power dissipation at 25 ambient temperature TerutarepmetnoitcnuJ j 150 TerutarepmetegarotS stg -55 to +150 PT 200 mW Electrical Characteristics Ta = 25 * PW 350us,duty cycle 2% PNP Transistors 2SA1411 ■ Classification of hfe Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -25 Collector- emitter breakdown voltage VCEO Ic= -1 mA， IB=0 -25 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -10 Collector-base cut-off current ICBO VCB= -25 V , IE=0 -0.1 Emitter cut-off current IEBO VEB= -7V , IC=0 -0.1 Collector-emitter saturation voltage * VCE(sat) IC=-50mA, IB=- 5mA -0.15 -0.3 Base - emitter saturation voltage * VBE(sat) IC=-50mA, IB=- 5mA -0.8 -1.2 Base - emitter saturation voltage * VBE VCE= -5V, IC= -1mA -580 mV VCE= -5V, IC= -1mA 500 1000 1600 VCE= -5V, IC= -100mA 200 400 Turn-on time ton 0.12 Storage time ts 0.58 Turn-off time toff 0.75 Output capacitance Cob VCB= -5V, IE= 0,f-1MHz 4.6 pF Transition frequency fT VCE= -5V, IE= -10mA 200 MHz DC current gain * hFE IC=-50mA,VBE(off)=2.7V , VCC=-10V ,IB1=IB2=-1mA V V us uA Type 2SA1411-M15 2SA1411-M16 Range 500-1000 800-1600 Marking M15 M16 0.4+0.1 -0.1 2.9+0.1 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.1 2.4+0.1 -0.1 1.3+0.1 -0.1 0-0.1 0.38+0.1 -0.1 0.97+0.1 -0.1 0.55 0.4 1.Base 2.Emitter 3.collector 1 2 Unit: mmSOT-23 0.1+0.05 -0.01