2SA1411 KEXIN
Document overview
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Technical content
Features
Very high DC current gain:hFE=500 to 1600. High VEBO Voltage:VEBO=-10V Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage V CBO -25 V Collector-emitter voltage V CEO -25 V Emitter-base voltage V EBO -10 V Collector current I C -150 mA Total power dissipation at 25 ambient temperature Junction temperature T j 150 Storage temperature T stg - 5 5t o+ 1 5 0 PT 200 mW Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cutoff current I CBO VCB =- 2 5V ,IE = 0 -100 nA Emitter cutoff current I EBO VEB =- 7V ,IC = 0 -100 nA DC current gain * h FE VCE =- 5V ,IC = -1 mA 500 1000 1600 Base-emitter voltage * V BE VCE =- 5V ,IC = -1 mA -580 mV Collector-emitter saturation voltage * V CE(sat) IC = -50mA , IB = -5mA -0.15 -0.3 V Base-emitter saturation voltage * V BE(sat) IC = -50mA , IB = -5mA -0.8 -1.2 V Gain bandwidth product f T VCE =- 5 V,IE = 10mA 200 MHz Output capacitance C ob VCB =- 5 V,IE =0,f=1 . 0 M H z 4 . 6 p F Turn-on time t on VCC = -10V , VBE(off) = 2.7V , 0.12 ns Storage time t stg IC = -50mA , 0.58 ns Turn-off time t off IB1 =- IB2 =- 1 m A 0 . 7 5 n s *P W 350ìs,duty cycle 2% hFE Classification Marking M15 M16 hFE 500 1000 800 1600 Silicon PNP Epitaxia 2SA1411