2SA1411 ETC
Document overview
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Technical content
AUDIO FREQUENCY AMPLIFIER, SWITCHING PNP SILICON EPITAXIAL TRANSISTOR
FEATURES
in millimeters © Very high DC current gain : hee = 500 to 1600 gy nee © High Vego Voltage : Vego =-10 V zt 15 065 "815 3 t ABSOLUTE MAXIMUM RATINGS ry Maximum Voltages and Current (Ta = 25°C) a gta Collector to Base Voltage Ves -25 v 2) 3 im Emitter to Base Voltage Veso “10 en a Esl Collector Current (DC) tc 150 mA =! 3] Maximum Power Dissipation Merking Total power Dissipation 3| at 25°C Ambient Temperature Pr 200 rit cy Z Maximum Temperatures 7 q| Junction Temperature T 150 *c 3 sare] Storage Temperature Range Tso =55t0 +150 1. emitr » 2. Sue 3 3. Collector 4] ELECTRICAL CHARACTERISTICS (Ta = 25 °C) De Curent Gein aa “eo | Voe= 80. 1g=-10 ma DC Current Gain heea® 200) 400 Vee = -8.0V, Ig = ~100 mA Gain Bandwidth Product fr [200 Miz | Vce=-50V, Ip = 10 mA ‘Output Capacitance | Cob ae fF | Vep= SOV. 1g =0,1= 1.0 MMe Tunontme | ton || Vee 10. Vector 27 ~ Pulsed: PW 380 ps, Duty Cycle 2% hee Classification [ering Ts wis