2SA1407 SANYO
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 8
Technical content
Features
- High fy: fp typ=400MHz. : + High breakdown voltage : Vopo2200V. - Small reverse transfer capacitance and excellent high-frequency characteristic : Cre=2.0pF (NPN), 2.5pF (PNP). - Complementary PNP and NPN types. + Adoption of FBET process. ( ):2SA1407 . Absolute Maximum Ratings at Ta=25°C unit Collector-to-Base Voltage Voso (—)200 Vv Collector-to-Emitter Voltage Vero (—)200 Vv Emitter-to-Base Voltage VEBO (-)4 v Collector Current Ic (-)150 mA Collector Current (Pulse) Icp (—)300 mA Collector Dissipation Po 1.2 Ww Te=25°C 7 Ww Junction Temperature Tj 150 °C Storage Temperature Tstg —55 to +150 ey Electrical Characteristics at Ta=25°C min typ max unit Collector Cutoff Current ogo Vop=(—)150V Ig =0 (-)0.1 pA Emitter Cutoff Current lepo Vep=(—)2V,Ig=0 (-)1.0 pA DC Current Gain hpg(1) Ver=(—)10V,I¢=(—)10mA 403K 320K hyg(2) Vog=(—)10V,I¢=(—)100mA 20 Gain-Bandwidth Product fy Voe=(—)30V,I¢=(—)50mA 400 MHz C-E Saturation Voltage Voxisat) I¢=(—)50mA,Ip=(—)5mA 06 =V (-0.8) Continued on next page. XX : The 28A1407/2SC3601 are classified by10mA hpg as follows. o_O 120 Package Dimensions 2009B
100 E 200 160 F 320 (unit : mm) 20
oRSie. <j 7 sa er T fol, 3] 3 © | ()—o fete B}2 30% 2388 x : 1; Emitter JEDEC: TO-126 2: Collector 3: Base SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bidg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 90495MO (KOTO)/3277KI/D105MW/2225MW, TS 8-7231 No.1766-1/4
a Continued from preceding page. min typ max unit B-E Saturation Voltage Vexieat) I¢=(—)50mA,Ip=(—)5mA (-)10 V C-B Breakdown Voltage Vosrycso Ic=(—)10pA,In=0 (—)200 Vv C-E Breakdown Voltage Voerceo I¢=(—)lmA,Rpp=0 (—)200 v E-B Breakdown Voltage Vopreso Ig=(—)100uA,Ic=0 (-)4 Vv Output Capacitance Cob Vop=(—)30V, f=1MHz 2.5 pF (3.0) F Reverse Transfer Capacitance Cre Vep=(—)30V, f=1MHz 2.0 pF (2.5) pF
50 Ic_- Vee so IC We
fasaiaor” | _z00ek_ TT [| 28C3601) Tsk ason0" 1 | go Lo jg ol (ET toys] ; a= seen t/a 77 aan Tye eel ee i po TT een fe) i AER ee 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 0 2 4 6 8 10 12 14 16 18 20 Collecter-to-Emitter Voltage, Vce — V Collecter-to-Emitter Voltage,Vcp — V Ic - Vj Ie = V “40 Voe=—10V “0 Vog=10V z < é a 4 8 -60 ae § 60 2 3 Pe i i ei a Jit | ~ TT Yt Tt Base-to-Emitter Voltage, Vyg ~ V Base-to-Emitter Voltage,Vg ~ V hee - Ic hee - Ic Ky 3 in an ae a ce Lit yy LT a ee ee | ptf CHa ERs S su é& g PCCP oe éiiit TIT yt | | pot Ty NT PEE TTT Pe 10 10 tft | tt a q [fT Jy es = - 10 "Collector Current,Ig eA Collector Current,lg — mA : Sn a No.1766-2/4
fr = Ie fr - 4 = 7 Voe=—-30V Eq -_ Rt Ht a = PCa PON eliUeTOTNT bea ¢ A 3 4 5 a bw & &
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ie I} TT Ti) Lt |_| marie 338 $3 3 as A VE get Holi TTT a 88 pee 88 FR Cory EA Py ST @49 23 T3023 5 7 49 2 3S 7 ~ 2 3 Collector Current,Ig — mA Collector Current,Ig — mA ASO Ma Pe - Ta | PTT TT 5 ae LT N' Ba iL ae ERNE a 0 b a a SN || Bs [| ee eS £ “| [oN & eee ee N an anne | —_ 3 3° N gel LP Py ase oH For PNP, minus sign is omitted. KK 4 rt >]? tein $s 7 10 2 3 5.7 400 2 3 ° 20 40 60 60 10 120 40 160 Collecter-to-Emitter Voltage, Vop — V Ambient Temperature, Ta — °C No.1766-3/4
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a, Na 3, eeN PTT eT ol 0 2 40 60 «BD 1120 «0160 Case Temperature,Tc —°C IENo products desoribed or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the Tike, the failure of which may directly or indirectly cause injury, death or property loss. WM Anyone purchasing any products described or contained herein for an above-mentioned use shall ® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO, LTD,, its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: . ® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. i Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but’no guarantees « are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. : This catalog provides information as of September, 1995, Specifications and information herein are subject to change without notice, No.1766-4/4
[Ordering number: EN1973A__| No.1973A 2SA1469/2SC3746 Ss A NYO PNP/NPN Epitaxial Planar Silicon Transistors fi 60V/5A High-Speed Switching Applications
Applications
- Various inductance lamp drivers for electrical equipment. - Inverters, converters (strobo, flash, fluorescent lamp lighting circuit). - Power amp (high power car stereo, motor controller). - High-speed switching (switching regulator, driver).
- Low saturation voltage. + Excellent current dependence of hpg. - Short switching time. - Micaless package facilitating mounting. ( ):28A1469 Absolute Maximum Ratings at Ta= 25°C unit Collector-to-Base Voltage Voso (—)80 Vv Collector-to-Emitter Voltage Voro (-)60 Vv Emitter-to-Base Voltage VeEBo (-)5 Vv Collector Current Ic (-)5 A Collector Current (Pulse) Icp (-)7 A Collector Dissipation Po 2 WwW Te=25°C 20 Ww Junction Temperature Tj 150 °C Storage Temperature Tstg -55to +150 °C Electrical Characteristics at Ta = 25°C min typ max — unit Collector Cutoff Current Iego Vop=(—)40V, Ip=0 (~)0.1 mA Emitter CutoffCurrent Ippo Vep=(—)4V, Ic=0 (-)0.1 mA DC Current Gain bee Vop=(—)2V,Ig=(—)1A 10% 280% Gain-Bandwidth Product fr Vop=(—)5V, Ig=(—)1A 100 MHz C-E Saturation Voltage Voigt) Io=(—)2.5A, Ip=(—)0.125A (04 V Continued on next page. *: The 25A1469/2SC3746 are classified by 1A hpg as follows
70 Q 140 100 R 200 140 S$: 280
(unit : mm) as ae tans 2h 7 [i Ero [ey © ib == eee ne: wry LOTS
7.24 E: Emitter
4 co RSS €: Collecter + 97 B: Base a SANYO: TO220ML SANYO Electric Co.,Ltd. Semiconductor Business Headquarters ; TOKYO OFFICE Tokyo Bldg., 1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 3277KYN265KI No.1973-1/4
Continued from preceding page. min typ) =omax unit C-B Breakdown Voltage Vgrcpo Ic=(—)imA,]g=0 (-)80 Vv (BRY C-E Breakdown Voltage Vigryczo Ic=(—)1mA, Rpp= = (—)60 Vv E-B Breakdown Vollage Vigpyepo Ip=(—)1mA,Ic=0 (-)5 v Turn-on Time ton See specified Test Circuit. 0.1 Bs Storage Time tstg % 0.5 Bs Fall Time ty % 0.1 uS Switching Time Test Circuit PW=20p6 1, ourPuT pest RB (@) ° ° a INPUT VR A He Hy 100 4 Vee-sv r Wt Son 20g] = —201g2=Ig=2A (For PNP, the polarity is reversed). Unit Resistance : 0, Capacitance : F) : Ic - Vee Ic = Vee : | | fe Vop=—-2V os ce=—2V 5 ; JAH gee | c TH # 2 s : z |_| Lilt B39 2 § 2; rf SH $2 j Hp Boy a kd fr Y | | Base-toEmitter Voltage, Vag — V Base-to-Emitter Voltage, Vpp — V Hee = Ie hee - 1 1000 C [TTT TTT TTT Jesataés ie 7 eee EE vers 2 tt Hi Voe=2¥ 3] — [|| & (pool Tees gw dae 1200 poet
2 PITTS UT £ Es ERS
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2 SCE SSS SS SS
OT | Bee é 5 SCOOT $ tea SECO ceeoe 7 ea a a 0 | {rr a A a cH 3 ait rr 001.29 S797 23 5749 23 5740 2 0.01 01 To 29 0 2 Collector Current, Ig — A Collector Current, 1g — A - No.1973-2/4
fr = ie fr. = Ie TOOL) ses CI =- 2 Vog=5V = HH er Pero \\ LU dee TN Ly | - \\
3 Ta NS ¢ Le TT
£3 nr) eH) ag FE au aE UL TTT a wH Ca) € 4 CTT Pa 7 7 8 tHe PtH 6 1001 “Collector Current, 1g A “ : Collector Current, Ig — A ” ero Epps 2SA1469 3 » pete fie] Ee ee 1 2 ma | a A fl i A A ~ H a” i Pee ee ee eee a a > ee gs Qe 3 se Ce eg OC 28-10 23 no és sit Ti) Tri Tr 23 oe 2 $3 34 Heer 3% a ae Heo ot Cease HCCC ree 23 4 1 | | [reer apg [tT poe
3.8 CI L aan re a | Se 3 an Pr
-o01 Meee col) PP ~oor 2 3 m1 92S 70 oor 2 2 57o; 23 Sao 2 9 T10 Collector Current, Iq — A Collector Current, Ig -— A ASO ASO “fie TT BSALA6D i a oh | ae <3 SeNewee < pet NA Tt Oo SS 1 TOS ASS ns sg Z wo wee Fo | Tek Foo oes See é 4 == < ose E —— eS gy | SSN goal TT ANT a rho TA By | ot IN 4 5 | PEN sa | NT -0.1 N, Cal L a H [I tf oo a Toy 2 3 a.) 2 3 3 7 400 2 3 & 7 1 2 3 100 Collector-to-Emitter Voltage, Vog — V Collector-to-Emitter Voltage, Veg — V a Pc - Ta va tT | Si EE eo 16) < : aN ae PEL N i ee Ambient Temperature, Ta Xo oe No.1973-3/4
I No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause iniury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: ® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO,, LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost arid expenses associated with such use: @® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. WM Information (including cirouit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production, SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. No.1973-4/4