2SA1405 SANYO
Document overview
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Technical content
Features
- High fp: fy typ =500MHz. - High breakdown voltage : Vego2 120V. - Smal] reverse transfer capacitance and excellent high-frequency characteristic : Cre=2.5pF(NPN), 3.8pF(PNP) - Complementary pair with the 25A1405/2SC3599. - Adoption of FBET process. (| ):2SA1405 Absolute Maximum Ratings at Ta =25°C unit Collector-to-Base Voltage Vcno (~)120 v Collector-to-Emitter Voltage Vcro (—)120 Vv Emitter-to-Base Voltage VEBO (—)4 Vv Collector Current Ic (—)300 mA Collector Current (Pulse) Iop (—)600 mA Collector Dissipation Po 1.2 WwW Te=25°C 8 WwW Junction Temperature Tj 150 °C Storage Temperature Tstg ~55 to +150 ey Electrical Characteristics at Ta=25°C min typ max unit Collector Cutoff Current Icgo. Vop=(—)80V, Ip=0 (-)0.1 pA Emitter Cutoff Current TeBo Vep=(—)2V, Io=0 (—)1.0 vA DC Current Gain heel) = Vop=(—)10V, Io =(—)50mA 40% 320% bpg(2) = Vog=(—)10V, Io =(—)250mA 20 Gain Bandwidth Product fp Vor=(—)10V, Ic =(—)50mA 500 MHz C-E Saturation Voltage Vorisat) Io=(—)70mA, Ip=(—)7mA 06 =V (—0.8) Continued on next page. %* : The 28A1405/2SC3599 are classified by 50mA hpg as follows : Package Dimensions 2009B 100_E 200 (unit : mm) 3.0 0 5.5 - ri etal er g A > | 4 a al2 i Gi e ——=T fe}, 3.04 a8 S <8 1: Emitter : 2: Collector 3: Base JEDEC : TO126 SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 12696TS (KOTO) X-7233/3237K1/2225MW, TS 'No.1764-1/4
: ft di e, min typ max unit Continued from preceding page. _ _ ee B-E Saturation Voltage VexEisat) Io =( = ron a= )imA (120 y C-B Breakdown Voltage ViprycBo ea re a (ib y C-E Breakdown Voltage Vier)CEO hana n BE=e a ¥ E-B Breakdown Voltage V(BR)EBO Ba OWA To=O oo us Output Capacitance Cob ‘cB=( fi a3 " i =(-— = 2.5 pF Reverse Transfer Capacitance Cre Vop=(—)30V, f=1MHz oa ve ic = Vee -y _ =sSe"an 160 Lt ge Lema Cee TE AAS —1,6m: 4 L ‘oe === ee Ae a) Annee 2 S00 8! 2s 3 ope te a eee a a aT ° Za fy to ama | [-— oes ft -8 712 is 16 -20 5 4 8 12 y ey 20 Collector-to-Emitter Voltage,Vop — V Collector Enter Voleee, CE to — Vee ic — Vee ~350 ¢ 2SA1405 “TT BSCHEOF Vor=—10V 300 ‘OE < 3 || a H : — - ., . — = -200| —. a | on . 8 Pf Trey | - ° Base-to-Emitter Voltage, Vz — V Deseo Ber Vole is v ne = ‘6 7 2SC3599
4 QSA1405 36
2°] Se YC] SAS? ER HN g 3 PH oe 8 a ° on Po CCL I Poa = _ oe ee ; Collector Current,Ic ~ mA Collector CurrentI¢ ~ m. No.1764-2/4
fr — le fr — h a T] | [1 BSALAO5 “TTT! t 28C3599
2 VcE=— a7 Vox=10V
; oti N | ef AL 2 \\ 3 _ 3 3
7 Vo) BeAr
5 ~~ é Collector Current,Ig — mA Collector Current,lg — mA ; Cob — Vee Cob — Veg 2SA1405 2503509 . dt - FT PTT Tt ety ey ae Ty Ce Ph et tH Poo PS PnP eS - z || man 2 11 PK gg a anal Bg -— 3 2 [7 5 |_| a : Fy be i i BE Ms 3 =10 3 700 7 7.0 a i0 +, Collector-to-Base Voltage, Von — V Collector-to-Base Voltage,Vcn — V +. Cre — Vee Cre — Vee ty 2SA1405 SC3509 oes) oe git y_ mane g1 aan S Tt > : | To Pat EET TT POSE) sce $ Ho st a _. | 2 ee ean Gall naaa #7 — Fa edit Pee *1.of oo i a j; TP yy | =1.0 3 =10 as 3 7-100 1.0 iy 100 Collector-to-Base Voltage, Voy — V. Collector-to-Base Voltage, Vog ~ V “10 Vee(saty — Ic Veg(sat) — Ic = aa _ S8A1405 ‘TTT [| 2803509 , ERREESE |. EEHEEEE
1 L i 1
af a ef = a ss J | \\[i7 eT as po ae 4s to a a a [ [jy | nd fej | | re 28-01 aA 250. L a ee Se - i 1” 10 Collector Current,Ig — mA Collector Current,I¢ ona No.1764-3/4
1000, ASO 16, Pc — Ta a 28A1405/28C3599 : 2SA1405/28C3599 sy = 2 4 < . 7 tf PPIN TEE
1 DC operation © 1,0) +
3 = — = | : “ P N 3 3 — 3 8 es ° ol NI ro forrhe minions ||| SEN ol 10 100 ‘020406080 10180 KO T60 Collector-to-Emitter Voltage, Voz — V Ambient Temperature, Ta — °C P Pc — Te in Ty | BSA1405/2503599 a : - B & NI g ZB, N _ g 3 2 co 6 I 0 2 20 6 80 WO 120 “0 160 Case Temperature,Te ~ °C MI No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power contro! systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. WM Anyone purchasing any products described or contained herein for an above-mentioned use shall ® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO, LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: @® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD, its affiliates, subsidiaries and distributors or any ot their officers and employees jointly or severally. WE Information {including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production, SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 1996, Specifications and information herein are subject to change without notice. ‘ No.1764-4/4