2SA1404 SANYO

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Technical content

Features

  • High fp: fy typ =500MHz, - High breakdown voltage : Vogo2120V. : Small reverse transfer capacitance and excellent high-frequency characteristic : Cre=1.6pF(NPN), 2.1pF(PNP) - Complementary pair with the 25A1404/2SC3598. - Adoption of FBET process. ( ):2SA1404 Absolute Maximum Ratings at Ta = 25°C unit Collector-to-Base Voltage Vcso (—)120 Vv Collector-to-Emitter Voltage Vcro (—)120 Vv Emitter-to-Base Voltage VEBO (-)4 Vv Collector Current Io (~)200 mA Collector Current (Pulse) Iop (-)400 mA Collector Dissipation Po 12° #W Te=25°C 8 Ww Junction Temperature Tj 150 °C Storage Temperature Tstg ~55 to +150 °C Electrical Characteristics at Ta=25°C min typ max unit Collector Cutoff Current Icpo Vep=(—)80V, Ip=0 (-)0.1 pA Emitter Cutoff Current Ippo Vep=(—)2V,Ic=0 (-)1.0 pA DC Current Gain hp) = Veg=(—)10V, Ip =(—)10mA. 40% 3202 hpg(2) Vog=(—)10V, Ic =(—)150mA 20 Gain Bandwidth Product fr Vor =(—)10V, Ic=(—)50mA 500 MHz C-E Saturation Voltage Vortsat) I¢=(—)50mA, Ip=(—)5mA 06 V (-0.8) Continued on next page. % : The 25A1404/2SC3598 are classified by 10mA hrg as follows : 40_¢ 80 Package Dimensions 2009B. 100_€ 200 (unit : mm) 20 he i na al er Q AF © | C)-of == 6/2 is “i nof 8 * 2 1; Emitter 2: Collector 3: Base JEDEC : TO126 SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 12696TS (KOTO) X-7234/3237KI/2225MW, TS No.1763-1/4

Continued from preceding page. min typ max unit B-E Saturation Voltage Vex(sat) Io=(—)50mA, Ip=(—)5mA (-)1.0 V C-B Breakdown Voltage Voprycpo Ic=(—)10pA, Ig=0 (—)120 Vv C-E Breakdown Voltage Vipriceo Ic=(—)imA, Rpg= (~)120 Vv E-B Breakdown Voltage VopryeBo Ig=(—)100A, Io=0 (-)4 v Output Capacitance Cob Vep=(—)30V, f=1MHz 2.0 pF (2.7) pF Reverse Transfer Capacitance Cre Vep=(—)30V, f=1MHz 1.6 pF (2.1) pF _ Ie = Vee Ic_~ Vee ‘resaido4 Ty.omA ar =0.9mA t_| o.BmA. ¢-«|-— a To.emA 4" po o7mA 2 a aa —0.6mA 2 wo [= - 8 y -0.5mA 5 / 5m. ona / on ae | 8 of 3 y 2 8 -« yr =02mA ad po ama A oe ee fn 9 =e 8 ar) = =20 0 rs @ 1H 16 20 Collector-to-Emitter Voltage, Vcz — V Collector-to-Emitter Voltage, Vc — V Ic = Vee Ic _— Vee Vop=—10V Voe=10V PLL ge i i} F 50 | F 10 § 3 5 5 pif a tT POPE) ee 8-9 8 x pli ty) Lt Ve oO -02 04 -06 -08 -10 =12 o 02 04 0.6 08 1.0 12 Base-to-Emitter Voltage, Var — V Base-to-Emitter Voltage, Vpz — V hre — Ic hre — Ic

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"Toon i 28A1404 2803598 =I Vog=—-10V: a = Rateiesrcis paces nea z | i 3 i a ‘ HP) ae & 10 zo g wt E Fp 4 i Pitt TT Tit |} @ PP el Pty) e@ Le 10 =10 10 10 10 Collector Current,[g — mA Collector Current,Ig — mA Cob — Vcp Cob — Vcp i 28A1404 | 2S8C3598 . a en ee 1 ee eee a os ee |g Cee é COSA POSS i i: EN re ee iL Ply) a EET z z UT HES Ht “He aT) = = r Collector-to-Base Voltage,Ven -v ° “callector-to-Base Voltage, Ven -Vv °e Cre — Veg Cre — Vcg fe 2SA1404 an 28C3598 | eee ee 2 0 eg 10 6] Pit Ptr) 6S EET Ty

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: cH Sutimnnaa git ae PL |: | JBN a f= DN g 10) 210

3 Pit Ty yt) oe || TTP PTT

Es HH EHH aqdvT>T TT yTTi [Try = 10) = = r Collector-to-Base voltege,Vcn -Vv . pollector-to Base Voltage.Vep -v ° “0 Vee(sat) — Ic 0 Vee(sat) — Ie = ESE te > tet > PO Pe Riemer 2 eee Bao r} oS TTT TT 3's ee 28 4+} 41+ HERS PEPER id L a ae See soe sera

52 Porritt Togs | TT er

| oo 3 SS PEER A 4 oy “1D 10 7100, Collector Current,Jg — mA " : Collector Current Ig - mA» No.1763-3/4

100, ASO ts Po — Ta (Se " SA1404/9S03698 [ee Ff ¢eEee ee FTN Pa id INET iN oq IN oad NX bes DC operation. N \\ ¢ E ios Te=25°C ANN 2 oa Ne: gE? Y Ea ‘8, ERE SSS ECCS g {tT re ere NO a a 0 100 0 26 a0 808000 20° 140160 Collector-to-Emitter Voltage,Vog - V Ambient Temperature, Ta — °C Pe — Te » BSA140472503598, Ea I Em g 4 is B g A 4 — q ol IN 0 20 40 6 80 100 200 40 160 Case Temperature,Tc — °C MNo products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss BM Anyone purchasing any products described or contained herein for an above-mentioned use shall: © Accept full responsibilty and indemnify and defend SANYO ELECTRIC CO, LTD, its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: . ® Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally, Mi Information {including circuit diagrams and cirouit parameters) herein is, for example only; it is not guarant- eed for volume production. SANYO believes information herein is acourate and reliable, but no guarantees- are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. : This catalog provides information as of January, 1996, Specifications and information herein are subject to change without notice, ° No.1763-4/4