2SA1403 SANYO
Document overview
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Technical content
Features
- High fy : fp typ =800MHz. . - Small reverse transfer capacitance and excellent high-frequency characteristic : Cre=2.9pF(NPN), 4.6pF(PNP) - Complementary pair with the 2SA1403/2SC3597. - Adoption of FBET process. ( ):28A1403 Absolute Maximum Ratings at Ta =25°C unit Collector-to-Base Voltage Verso (—)80 v Collector-to-Emitter Voltage VcEo (—)60 v Emitter-to-Base Voltage VEBO (-)4 Vv Collector Current Io (—)500 mA Collector Current (Pulse) Icp (-)1 A Collector Dissipation Po 1.2 WwW Te=25°C 10 WwW Junction Temperature Tj 150 °C Storage Temperature Tstg —55 to +150 °C Electrical Characteristics at Ta=25°C min typ max unit Collector Cutoff Current Icgo Vop=(—)60V, Ip=0 (-)0.1 pA Emitter Cutoff Current Tgpo Vep=(—)2V, Ig=0 (—)1.0 yA DC Current Gain hye) Von=(—)10V, Io =(—)50mA 40K 320% hpg(2) Vog=(—)10V, Io=(—)400mA 20 Gain Bandwidth Product fy Ver=(—)10V, Ig =(—)100mA 800 MHz C-E Saturation Voltage Vorisat) I¢=(—)100mA, Ig=(—)10mA 06 V (-0.8) Continued on next page. * : The 2A1403/2SC3597 are classified by 50mA hpy as follows :
40 Cc 80 60 D 120
160_F_320 Package Dimensions 2009B (unit : mm) 3.0 heat iss =f ee aes | we “5
2 O~tetbeeee 2
dijo? Rt 1 30% 888 a] fhe 1: Emitter 2: Collector 3: Base JEDEC : T0126 SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 12696TS (KOTO) X-7235/3237KI/2225MW, TS No.1762-1/4
Continued from preceding page. min typ max unit B-E Saturation Voltage Vpx(eat) I¢=(—)100mA, Ip=(—)10mA (-)10 V C-B Breakdown Voltage Vearycpo I¢=(—)10nA, Ig=0 (—)80 Vv C-E Breakdown Voltage Visr)ceo Io=(—)1mA, Rpp=° (—)60 v E-B Breakdown Voltage Voeprieso Ig=(—)100uA, Ic =0 (-)4 v Output Capacitance Cob Vop=(—)30V, f=1MHz 3.4 pF (5.2) pF Reverse Transfer Capacitance Cre Vop=(—)30V, f= 1MHz 2.9 pF (4.6) pF . Ic = Vee Ic = Vee —1.6m a a : f Td 14mA \\ rc =1.2m4. | f— 2 gl fed Sl fom S 0 an soon 5 wolf (a O.8mA 8 00 i" SS & » 0.4mA | nr ee |e fe of =o 0 <4 -8 oars 16 20 oO 4 8 rd 16 20 Collector-to-Emitter Voltage, Vog — V. Collector-to-Emitter Voltage, Vop ~ V _ Ic ~ Vee lo — Vi head 2SA1403 oy $ - 2808607 < 500 ft} iPr ee ] 2m i pif | ey E ~ x0}. o oe a : 2 : + ° “ , yP | C) —02 04 ~06 -08 10 abe ) 02 04 06 08 1.0 12 Base-to-Emitter Voltage, pz — V Base-to-Emitter Voltage, Vpp ~ V hee — Ic hee — Ic 3SA1403 2SC3597 TN PT AN a 4 & Pert | 3 HHA Hq Ne ae Pity TN Ltt yt AN é | Siti TT TN og, petty Ter : PP Uy 10 0 Pty PT ry Pit Tr Ty rr pi j~fpir yey top = a) r m Collector Current,lg — mA Collector Current,Ig — mA na : No.1762-2/4
fr — Ic fr -ch i 2S8A1403 . T © 2803597 1000 1000 Lefty Pe Pt Ho Sea | & a Re Lo . ; ¢ ea g erry | yt BIT a TN) Ler ut wal Fi Fa Z| \\ sooo eco LOC) Le FA a ee é- 5 - aH HH PE eH “ Terry Collector Current,Ig — mA ° Collector Currently ~ mA me Cob — Veg Cob — V, CC ee Co oe . =1MHz| = * YT | S44 [| ; Eee ae gece Po 3s oO 10 oo 10 ¢ Lt | TST] a i DHRC GES Peet Pit PCE s s = : tH rep | tty gd [| Eye an ot) at CAFE EE EY E =10 - — « * Collector-to-Base Voltage.Ven ~y callector-to-Base Voltage,Vep -v ° “a . Cre — Vog oT Sea] * TO eS fl Vog=—10V} 1 f=1MH 2 poste g poe eet tae os 1 % Po Nn 3 cee eee 3 [~~] é i
5 HH PST] ¢ pT PPSA ET
: +S cestaeeniae E Pi yer PO s e177 Ty a fT et e Ee Collector-to-Base Voltage, Vep — V Collector-to-Base Voltage.Vop -Vv °
7 Vee(sat) ~ Ic Vee(sat) Ic
10, 10 pf 38A1403 TI I > gg) PT I¢/Ig=10 Hep iano \\ PT y Tey | _ 2s i} a Sere 24f{t Pp ry eo} | Ett Tt) gyi ry 5 a ae [I fs J ye) gs Dr is oo 35 Pa sat ba ETT Te ds ae sa CT] | 32° rT) | a ' ijt PP yr yy PJs Collector Currentig = mA ° Collector Current fg — mA ‘” elector Currentig= ma Collector Currenbslo= mA, No.1762-3/4
, ASO ‘ Pc — Ta lie | | 2SA1403/28C3597 “ [TLL] 2SA1403/08C3597 CP. 1000 I XY A 12 oe Ne ONCE i h : g Po |[] 0 UNy | ETT Ty [Xe 100 3 Neo | oy TNT As eT 2 | a ee B oa N {| ee a ee ae Si 19 [For PNP, minus sign is omitted, mel | | | {| \\ | 10 1 % 20 40 60 80 10 8120 40 160 Collector-to-Emitter Voltage, Voz — V Ambient Temperature, Ta — °C
12 Pe — Te
‘ LETS waa Be IN d aii tT} NET Pa & 2 KG °! PT pp UN i) 20 40 60 80 100 120 «40 160 Case Temperature,Te — °C No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. M Anyone purchasing any products described or contained herein for an above-mentioned use shall: ® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD,, its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost’and expenses associated with such use: ® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production, SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 1996, Specifications and information herein are subject to change without notice, No.1762-4/4