2SA1395 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
j *~s , O ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SA1395
DESCRIPTION
- Low Collector Saturation Voltage- : VCE(sat)= -0.6V(Max)@ lc= -1A
- High Switching Speed
- Complement to Type 2SC3567
APPLICATIONS
- Designed for switching regulator, DC-DC converter and high frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25°C) PIN 1.BASE 1. COLLECTOR 3. BETTER TO-220Fa package SYMBOL VCBO VCEO VEBO Ic I CM IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @TC=25'C Junction Temperature Storage Temperature VALUE -100 -100 150 -55-150 UNIT V V V A A A W r J J 1*^- 1 - C *u ' I
1 I ' '
H T C s-» DIM A B C D F G H J K L N Q R S U V mm WIN 16.85 9,54 4.35 0.75 3.20 6.90 3.80 0.45 13.35 1.10 4.98 4.85 2,&5 2.70 1.75 1.30 MAX 17.15 10.10 4.65 0,30 3.40 7.20 4.20 0.75 13.80 1.30 5.1S 5.15 3.25 2.90 2.05 1.50 rf NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time oFgoing to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors
Silicon PNP Power Transistor 2SA1395
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specified SYMBOL VcEO(SUS) VcEX(SUS)-1 VcEX(SUS)-2 VcE(sat) VeE(sat) ICBO ICER ICEX IEBO hpE-1 hpE-2 PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain CONDITIONS lc=-1A; IB=-0.1A, L=1mH IC=-1A;IB1--IB2=-0.1A, L=180u H, clamped lc=-2A; IB1=-0.2A; IB2=0.1A, L=180u H, clamped IC=-1A; IB=-0.1A IC=-1A; IB=-0.1A VCB=-100V;IE=0 VCE= -100V ; RBE= 51 n ,Ta=125°C VcE=-100V;VBE(off)=-5V VCE= -100V; VBE<OID= -5V,Ta=125T: VEB= -5V; lc= 0 IC=-0.1A;VCE=-5V lc= -1A; VCE= -5V MIN -100 -100 -100 MAX -0.6 -1.5 -10 -1.0 -10 -1.0 -10 200 UNIT V V V V V u A mA u A mA u A Switching times ton tstg tf Turn-on Time Storage Time Fall Time lc=-1A,RL=50n, |B1= -|B2= -0.1A,VCc=-50V 0.5 1.5 0.5 u s u s M s
- hpE-2 Classifications M 40-80 L 60-120 K 100-200