2SA1395 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
INCHANGE Semiconductor Product Specification isc website：www.iscsemi.cn isc & iscsemi is registered trademark 1 isc Silicon PNP Power Transistor 2SA1395
DESCRIPTION
- Low Collector Saturation Voltage- : VCE(sat)= -0.6V(Max)@ IC= -1A
- High Switching Speed
- Complement to Type 2SC3567
APPLICATIONS
- Designed for switching regulator, DC-DC converter and high frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -2 A ICM Collector Current-Peak -4 A IB Base Current-Continuous -1 A PC Collector Power Dissipation @TC=25℃ 15 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃
INCHANGE Semiconductor Product Specification isc website：www.iscsemi.cn isc & iscsemi is registered trademark 2 isc Silicon PNP Power Transistor 2SA1395
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -1A; IB= -0.1A, L=1mH -100 V VCEX(SUS)-1 Collector-Emitter Sustaining Voltage IC= -1A; IB1=-IB2= -0.1A, L=180μ H,clamped -100 V VCEX(SUS)-2 Collector-Emitter Sustaining Voltage IC= -2A; IB1= -0.2A; IB2= 0.1A, L=180μ H,clamped -100 V VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.1A -0.6 V VBE(sat) Base-Emitter Saturation Voltage IC= -1A; IB= -0.1A -1.5 V ICBO Collector Cutoff Current VCB= -100V ; IE=0 -10 μ A ICER Collector Cutoff Current VCE= -100V ; RBE= 51Ω ,Ta=125℃ -1.0 mA ICEX Collector Cutoff Current VCE= -100V; VBE(off)= -5V VCE= -100V; VBE(off)= -5V,Ta=125℃ -10 -1.0 μ A mA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -10 μ A hFE-1 DC Current Gain IC= -0.1A; VCE= -5V 40 hFE-2 DC Current Gain IC= -1A; VCE= -5V 40 200 Switching times ton Turn-on Time IC= -1A ,RL= 50Ω , IB1= -IB2= -0.1A,VCC≈-50V 0.5 μ s tstg Storage Time 1.5 μ s tf Fall Time 0.5 μ s hFE-2 Classifications M L K 40-80 60-120 100-200