2SA1385-Z ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
isc website： www.iscsemi.com isc &iscsemi isregisteredtrademark1 isc SiliconPNPPowerTransistor 2SA1385-Z
DESCRIPTION
- HighCollector-EmitterBreakdown Voltage :V(BR)CEO=-60V(Min)
- Excellentlinearity ofhFE
- Lowcollector-to-emittersaturation voltage
- MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operation
APPLICATIONS
- Designedforaudio frequencypower amplifierapplications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-BaseVoltage -60 V VCEO Collector-EmitterVoltage -60 V VEBO Emitter-BaseVoltage -7 V IC CollectorCurrent-Continuous -5 A ICM PulseCollectorCurrent -7 A PC CollectorPowerDissipation @TC=25℃ 10 W TJ JunctionTemperature 150 ℃ Tstg StorageTemperatureRange -55~150 ℃
isc website： www.iscsemi.com isc &iscsemi isregisteredtrademark2 isc SiliconPNPPowerTransistor 2SA1385-Z ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-EmitterBreakdownVoltage IC=-10mA;IB=0 -60 V VCE(sat) Collector-EmitterSaturationVoltage IC=-2A;IB=-0.2A -0.3 V VBE(on) Base-EmitterOnVoltage IC=-2A;IB=-0.2A -1.2 V ICBO CollectorCutoffCurrent VCB=-50V;IE=0 -10 μA IEBO EmitterCutoffCurrent VEB=-7V;IC=0 -10 μA hFE1 DCCurrentGain IC=-2A;VCE=-1V 100 400 hFE2 DCCurrentGain IC=-5A;VCE=-1V 50 fT Current-Gain—BandwidthProduct IC=-0.5A;VCE=-10V 140 MHz hFE1 Classifications M L K 100-200 160-320 200-400