2SA1385-Z_15 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Features
Low VCE(sat):VCE(sat)=-0.18 V TYP. Absolute Maximum Ratings Ta = 25 tinUgnitaRlobmySretemaraP Vegatlovesab-rotcelloC CBO -60 V Vegatlovrettime-rotcelloC CEO -60 V Vegatlovesab-rettimE EBO -7 V ItnerrucrotcelloC C -5 A I*esluptnerrucrotcelloC CP -7 A PnoitapissidrewoplatoT T 10 W TerutarepmetnoitcnuJ j 150 TerutarepmetegarotS stg -55 to +150 * PW 10ms, duty cycle 50%. Electrical Characteristics Ta = 25 * PW 350us, duty cycle 2%. www.kexin.com.cn Marking M L K hFE 100 200 160 320 200 400
- Complement to 2SC3518-Z PNP Transistors 2SA1385-Z 2.3 0.60+ 0.1 - 0.1 6.50+0.15 -0.15 1.50 +0.15 -0.15 0.80+0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30+0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.152.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3.80 TO-252 Unit: mm
1 Base
2 Collector
3 Emitter
■ Classification of hfe Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -60 Collector- emitter breakdown voltage VCEO Ic= -1 mA， IB=0 -60 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -7 Collector-base cut-off current ICBO VCB= -50 V , IE=0 -10 Emitter cut-off current IEBO VEB= -7V , IC=0 -10 Collector-emitter saturation voltage * VCE(sat) IC=-2A, IB=- 0.2A -0.18 -0.3 Base - emitter saturation voltage * VBE(sat) IC=-2A, IB=- 0.2A -1.2 VCE= -1V, IC= -2A 100 200 400 VCE= -1V, IC= -5A 50 100 Turn-on time ton 0.08 1 Storage time ts 0.55 2.5 Fall time tf 0.18 1 Transition frequency fT VCE= -10V, IC= -0.5A 140 MHz DC current gain * hFE IC=-2A,IB1=-IB2=-0.2A,RL=50Ω, VCC=-10V V V us uA
www.kexin.com.cn2 Transistors PNP Transistors 2SA1385-Z ■ Typical Characterisitics
www.kexin.com.cn 3 Tran sistors PNP Transistors 2SA1385-Z ■ Typical Characterisitics