KSA1381ES FAIRCHILD

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 6

Technical content

Features

  • High Voltage : V CEO= -300V
  • Low Reverse Transfer Capacitance : C re= 2.3pF at VCB = -30V
  • Excellent Gain Linearity for low THD
  • High Frequency: 150MHz
  • Full thermal and electrical Spice models are available
  • Complement to 2SC3503/KSC3503 Absolute Maximum Ratings* Ta = 25°C unless otherwise noted * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics* Ta=25°C unless otherwise noted * Device mounted on minimum pad size hFE Classification Symbol Parameter Ratings Units BVCBO Collector-Base Voltage -300 V BVCEO Collector-Emitter Voltage -300 V BVEBO Emitter-Base Voltage -5 V IC Collector Current(DC) -100 mA ICP Collector Current(Pulse) -200 mA PC Total Device Dissipation, TC=25°C TC=125°C 1.2 W W TJ, TSTG Junction and Storage Temperature - 55 ~ +150 °C Symbol Parameter Max. Units RθJC Thermal Resistance, Junction to Case 17.8 °C/W Classification CD E F hFE 40 ~ 80 60 ~ 120 100 ~ 200 160 ~ 320

1 TO-126

  1. Emitter 2.Collector 3.Base

2SA1381/KSA1381 — PNP Epitaxial Silicon Transistor © 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com 2SA1381/KSA1381 Rev. A1 2 Electrical Characteristics* Ta=25°C unless otherwise noted * Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%

Ordering Information

  • 1. Affix “-S-” means the standard TO126 Package.(see package dimensions). If the affix is ”-STS-” instead of “-S-”, that mean the short-lead TO126 package. 2. Suffix “-TU” means the tube packing, The Suffix “TU” could be replaced to other suffix character as packing method. Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC = - 10µA, IE = 0 - 300 V BVCEO Collecto- Emitter Breakdown Voltage IC = - 1mA, IB = 0 - 300 V BVEBO Emitter-Base Breakdown Voltage IE = - 10µA, IC = 0 - 5 V ICBO Collector Cut-off Current VCB = - 200V, IE = 0 - 0.1 µA IEBO Emitter Cut-off Current VEB = - 4V, IC = 0 - 0.1 µA hFE DC Current Gain VCE = - 10V, IC = - 10mA 40 320 VCE(sat) Collector-Emitter Saturation Voltage IC = - 20mA, IB = - 2mA - 0.6 V VBE(sat) Base-Emitter Saturation Voltage IC = - 20mA, IB = - 2mA - 1 V fT Current Gain Bandwidth Product VCE = - 30V, IC = - 10mA 150 MHz Cob Output Capacitance VCB = - 30V, f = 1MHz 3.1 pF Cre Reverse Transfer Capacitance VCB = - 30V, f = 1MHz 2.3 pF Part Number* Marking Package Packing Method Remarks 2SA1381CSTU 2SA1381C TO-126 TUBE hFE1 C grade 2SA1381DSTU 2SA1381D TO-126 TUBE hFE1 D grade 2SA1381ESTU 2SA1381E TO-126 TUBE hFE1 E grade 2SA1381FSTU 2SA1381F TO-126 TUBE hFE1 F grade KSA1381CSTU A1381C TO-126 TUBE hFE1 C grade KSA1381DSTU A1381D TO-126 TUBE hFE1 D grade KSA1381ESTU A1381E TO-126 TUBE hFE1 E grade KSA1381FSTU A1381F TO-126 TUBE hFE1 F grade

2SA1381/KSA1381 — PNP Epitaxial Silicon Transistor © 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com 2SA1381/KSA1381 Rev. A1 5 Package Dimensions ø3.20 ±0.10 0.75 ±0.10 0.75 ±0.10 2.28TYP [2.28±0.20] 2.28TYP [2.28±0.20] 1.60 ±0.10 11.00 ±0.20 3.90 ±0.10 14.20MAX 16.10 ±0.20 13.06 ±0.30 1.75 ±0.20 (0.50)(1.00) 0.50 +0.10 –0.05 TO-126 Dimensions in Millimeters

2SA1381/KSA1381 PNP Epitaxial Silicon Transistor2SA1381/KSA1381 © 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com 2SA1381/KSA1381 Rev. A1 6 Rev. I31 TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHA NGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PROD UCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS . THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIF ICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CR ITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or sys tems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms ACEx® Build it Now™ CorePLUS™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FPS™ FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ i-Lo™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ Motion-SPM™ OPTOLOGIC OPTOPLANAR® PDP-SPM™ Power220® Power247® POWEREDGE® Power-SPM™ PowerTrench Programmable Active Droop™ QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ SMART START™ SPM STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ The Power Franchise TinyBoost™ TinyBuck™ TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ µSerDes™ UHC UniFET™ VCX™ Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be pub- lished at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontin- ued by Fairchild semiconductor. The datasheet is printed for reference infor- mation only.