2SA1369_15 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Features
High Collector Current (ICM = -3A, IC = -1.5A) High Collector Dissipation PC = 500mW Small Package For Mounting Complementary to 2SC3439 Absolute Maximum Ratings Ta = 25 tinUgnitaRlobmySretemaraP VegatloVesaB-rotcelloC CBO -30 V VegatloVrettimE-rotcelloC CEO -20 V VegatloVesaB-rettimE EBO -6 V ItnerruCrotcelloC C -1.5 A ItnerruCrotcelloCkaeP CM -3 A PnoitapissiDrewoProtcelloC C 500 mW TerutarepmetnoitcmuJ j +150 TegnaRerutarepmetegarotS stg -55 to +150 1.Base 2.Collector 3.Emitter 1.70 0.1 0.42 0.1 0.46 0.1 PNP Transistors 2SA1369 ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -30 Collector- emitter breakdown voltage VCEO Ic= -1 mA，RBE=∞ -20 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -6 Collector-base cut-off current ICBO VCB= -20 V , IE=0 -0.1 Emitter cut-off current IEBO VEB= -5V , IC=0 -0.1 Collector-emitter saturation voltage VCE(sat) IC=-1A, IB=- 20mA -0.25 -0.5 Base - emitter saturation voltage VBE(sat) IC=-1A, IB=- 20mA -1.2 DC current gain hFE VCE= -6V, IC= -500mA 400 1200 Collector Output Capacitance Cob VCE= -10V, IE= 0,f=1MHz 37 pF Transition frequency fT VCE= -10V, IE= 10mA 90 MHz V uA V ■ Classification of hfe Type 2SA1369-G 2SA1369-H Range 400-800 600-1200 Marking GG GH
www.kexin.com.c n2 SMD Type Transistor s PNP Transistors 2SA1369 ■ Typical Characterisitics
www.kexin.com.c n 3 SMD Type Transistor s ■ Typical Characterisitics PNP Transistors 2SA1369