2SA1352 NJSEMI

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 2

Technical content

, [i nc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Power Transistor TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 2SA1352

DESCRIPTION

  • High Collector-Emitter Breakdown Voltage- V(BR)CEo= -200V (Min)
  • Complement to Type 2SC3416

APPLICATIONS

  • Designed for color TV chroma output, high-voltage driver applications. ABSOLUTE MAXIMUM RATINGS(Ta=25r) PIN (.EMITTER 2,COLLECTOR 3. BASE TO-126 package SYMBOL VCBO VCEO VEBO Ic I CM PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Power Dissipation @ Ta=25'C Total Power Dissipation @ TC=25'C Junction Temperature Storage Temperature Range VALUE -200 -200 -5.0 -0.1 -0.2 1.2 150 -55-150 UNIT V V V A A W r f i H - T D-» Q — B— a I G * i i i 1 • * 11 1 " ' 2 3 DIM A B r D F G H J K R V Q T V a-... D m MIN 10.70 7.70 2.60 LK&6 3.10 4.48 2.00 1.35 15.30 3,70 0.40 1.17 ~*1 t A 1 • i K. ~* m MAX 10.95 7.90 2,50 0.86 3.30 4.68 2.20 1.55 16,30 3..90 0.60 1.37 :p- r*"J *-R NJ Semi-Coiuliictors reserves the right to change test conditions, parameter limits and package dimensions \\vithout notice. Information furnished hy N.I Semi-Conductors is believed to he both accurate and reliable at the time of going to press. However, N.I Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. N.I Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Qualify Semi-Conductors

Silicon PNP Power Transistor 2SA1352

ELECTRICAL CHARACTERISTICS

Tc=25°C unless otherwise specified SYMBOL V(BR)CBO V(BR)ceo V(BR)EBO VcE(sat) VsE(sat) ICBO IEBO HFE fj COB PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Current-Gain — Bandwidth Product Output Capacitance CONDITIONS lc=-10u A; IE=0 lc=-1mA; RBE= °° !E=-10u A; lc=0 lc= -20mA; IB= -2mA lc= -20mA; IB= -2mA VCB=-150V; IE=0 VEB= -4V; lc= 0 lc=-10mA;VcE=-40V lo=-10mA;VcE=-30V !E= 0; VCB= -30V; f= 1.0MHz MIN -200 -200 TYP, 1.7 MAX -0.6 -1.0 -0.1 -0.1 320 UNIT V V V V V uA u A MHz PF Classifications c 40-80 D 60-120 E 100-200 F 160-320