2SA1352 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn isc & iscsemi is registered trademark 1 isc Silicon PNP Power Transistor 2SA1352
DESCRIPTION
- High Collector-Emitter Breakdown Voltage- V(BR)CEO= -200V (Min)
- Complement to Type 2SC3416
APPLICATIONS
- Designed for color TV chroma output, high-voltage driver applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -200 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current-Continuous -0.1 A ICM Collector Current-Peak -0.2 A PC Collector Power Dissipation @ Ta=25℃ 1.2 W Total Power Dissipation @ TC=25℃ 5 TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn isc & iscsemi is registered trademark 2 isc Silicon PNP Power Transistor 2SA1352
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= -10μ A; IE= 0 -200 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; RBE= ∞ -200 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -10μ A; IC= 0 -5 V VCE(sat) Collector-Emitter Saturation Voltage IC= -20mA; IB= -2mA -0.6 V VBE(sat) Base-Emitter Saturation Voltage IC= -20mA; IB= -2mA -1.0 V ICBO Collector Cutoff Current VCB= -150V; IE= 0 -0.1 μ A IEBO Emitter Cutoff Current VEB= -4V; IC= 0 -0.1 μ A hFE DC Current Gain IC= -10mA ; VCE= -40V 40 320 fT Current-Gain—Bandwidth Product IC= -10mA ; VCE= -30V 70 MHz COB Output Capacitance IE= 0; VCB= -30V; f= 1.0MHz 1.7 pF hFE Classifications C D E F 40-80 60-120 100-200 160-320