2SA1348 SANYO
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Technical content
Ordering number: EN 1290C No.1290C 28A1348/2SC3402 Fae ec a PNP/ NPN Epitaxial Planar Silicon Transistors [ee yy Switching Applications SO ALIN Ui Cee . . . Ines (with Bias‘Resistance) Applications ff YO Switching circuit, inverter, interface circuit, driver és % & oe Features og rw “ty fe * Built-in bias resistor (R4=10kQ, R2=10kQ), tae ae + Small-sized package (SPA). if ee ff ( ): 2801348 ff SOW f Absolute Maximum Ratings/T 25°C if unit 6 Collector to Base Voltage Vcso So gee 8 Collector to Emitter Vottage VcEO oe & Apo Ae Emitter to Base Voltage Veso oe ole Collector Current Ic EP S100 ina Collector Current(Pulse) Iop if “yg” (200) mA Collector Dissipation Pc ff ee ee Junction Temperature Tj éé £'% AO °c Storage Temperature Tstg Sy) 85 tot 50 *c Electrical Charactaristics/T g=25°C of se & fé min typ max — unit Collector Cutoff Current Icg6," Mep=te)40V, ler {-)0.1 uA Collector Cutott Current 'CEO a, VCEN(-)40V, Jig-0 (-10.5 = WA Emitter Cutoff Current lEBO ay, Megst-)8v4g*0 (—1170(-)260(—}330 HA DC Current Gain OAPE ~QVCE*(-)5V,4c=(—}10mA 50 Gain-bandwidth product fe fT. ee WeE=( ov, Ic=(-)5mA, 250 MHz of Ses KF (200) Output Capacitance oe Seb. “28. VegelE) OV, f= MHz 37 pF Collector to Emitter Saturation “SM CE(sat) Jezt-10mA, Ig=(—0.6mA (10.1 (-)0.3 Vv Voltage fé Sep Jf fe ams is Continued on next page. ff AGS. ff collector Cate Outiine 2033 ee & fouepur) rs; (Output) (unit: mm) éf & POY Ise r) 15.0 - eta ET be Jee eS? “oe emer Emitter Q net Ct : Collector pu wen E: Bmitter SANYO: SPA Specifications and information herein are subject to change without notice. SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg... 1-10, 1 Chome. Ueno, Taito-ku, TOKYO, 110 JAPAN 3237KI/ 3075KI/ 4143K1, 1S, - No. 1290-1/2
Continued from preceding page. senttun to nn Coltector to Base Breakdown Viericeo Ic . soe ' =(—]100uA, RBE=° a Collar to Emiter Breakdown ViBRICEO Ic#(-) i Oeue : Voltage Vitoff Voe=(-15V, Nort }100WA, Cyotea io \\ Off Voltage VcE={-10.2V, Ic={-10m: 194-2 i et Yt me ° AB & 11 oe Input Resistance . Ry/R oe a “Sy PP Input Resistance Ratio fé & & fi = Sample Application wae oN fi Input ON-state voltage: 4V or more a vs, q% J ™ input a ae eae fy Input OFF-state voltage: 0.8V or less Ve Lo, Yeast? if of Qe ay és le reversed.) iy if halen shatalcty a Vi(on) - Ic rere gal fT poe AeA E iy -—-|— Te AR YR ° Mees ‘in omitied. ee { 1 For PN mit 3 a re ‘Gureent.lin ma”? Input Off Vetnge, it Collector ¢ eee Hed of be Ta Se) NCEE Py Ae ttt Wo _ i 4 Cregg) cscs - EE SS os) INC ; , 4 ‘ a 3 bh Sega) No VEE |: SCG ee oe = CHORALE ste ° << mae zt we ve ; * "Ambient Temperature, Ta-°C Current, I¢ — mA