2SA1347 SANYO
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No.i2890_ |} 2SA1347/2SC3401 SA'VYO ee PNP/ NPN Epitaxial Planar Silicon Transistors PO aig Switching Applications [eee aa ne pie nate (with Bias Resistance) Applications és os. PF Switching circuit, inverter, interface circuit, driver of 4 & é¢ + Built-in bias resistor (Rq=46k, R2=23kQ). a ree + Small-sized package (SPA). ff Fee Sf ( ): 201947 ff Sere f/f Absolute Maxinwm Ratings/T "25°C eon oh lee Collector to Base Voltage VcBo SF gh WO VO Collector to Emitter Voltage VcEO ar 4 ee Emitter to Base Voltage VeBO ff A she ra Coltector Current Ic ef ss Fyy00 A Collector Current(Pulse) Top ge ad (-9200 »* mA Collector Dissipation Pc af ; “i 300" .” mW Junction Temperature Tj if ge 150" ac Storage Temperature Tstg ee Se ‘5s to +150 Cc Etectrical Charactarlstice/T "25°C Prd ee Py ag min typ) max unit Collector Cutoff Current Icpq?” Vep=ti40V, 1e=0" (10.1 uA Collector Cutoft Current IcEO a VCEBE:}40V, 1p0° (105 9 pA Emitter Cutoff Current 'EBO a. “Weg=(-)5V, le=0 (-140 (-172(-)100 WA DC Currant Gain JAFE ON CESI-)5VAg=(—)5mA 50 Gain-bandwidth product oAT meV E=(-) 10; Ic=(-)5mA 260 MHz Output Capacitance Pe Ce Sy. Vea=f-)10V, fIMHz 37 pF Collector to Emitter Saturation“ Vge(saty’ —Ig#(“5mA, Ip=(—10.26mA (0.1 (10.3 v Voltage fe Beer oe OS ibtem Rey és Continued on next page. Electrical Connedtion Case Outline 2033 oe Oe oe how fe-p——"8 bi ga any ve HH : od 3 3 emitter Emitter B: Base (Gnd) (Gad) ci Collector PNP NPN EB; Emitter SANYO: SPA Specifications and information herein are subject to change without notice. SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldy.,1-10,1 Chome, Ueno, Taito-ku, TOKYO. 110 JAPAN 3237KI/ 3075KI/ 4143K1,1S. No. 1289-1/2
Continued from preceding page. min typ max unit Collector to Base Breakdown Visricso § Ic*(—}10pA, le=0 {+)50 Vv Voltage Collector to Emitter Breakdown ViIBRICEO Ic={-}100HA, Raga {+150 Vv Voltage nm Input Off Voltage Vidott) — Voen(-I8V,lont)100nA (ZALBMI23 sv Input On Voltage Viton) VcE*(-10.2V,Io=(-}5mA (1 RBA-13.14 36.0. v Input Resistance Ry fm (Be AO. kA Input Resistance Ratio Ry/Ro ees A, 22." “ Semple Application Circult * ff Sse Of Input ON-state voltage: 6V or more a af Fo Ye é¢ INPUT RI a a, fi Input OFF-state voltage: 1.2V or less ee . f¢ af (Box PNP/'the polatity is reversed.) Von=0, : ? ' R21 23K a "MER? $ 23k 02 |_| ZV = vf 8 ye eS tp ie ? i meen “8 i] | Tey | | Cotlectst Currentig — mar ae Input Off Voltage, Vi (off) — V “oA ee) MERE Hither) OR # Dee ‘a | NJ = Tey TT ee ea |_| ttf
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ge HE WHA ry tty $l NI Etter 8 in) ae Ny NY ~ For PNP, minus sign is omitted. 8 +t] i] i TN] patio tn, I¢— mA ” Ambient Temperature, Ta — °C