2SC3400 SANYO
Document overview
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Technical content
“Ne.s288c || 28A1346/2SC3400 ea PNP/ NPN Epitaxial Planar Silicon Transistors i moe cog Switching Applications is ES with Bias Resistance) Applications fé e& & “ge Switching circuit, inverter, interface circuit, driver ff, ss . eg Features ff & “A é¢ * Built-in bias resistor (R 1=22k, R2=22kQ). ar ee + Smali-sized package (SPA). if nd “RS ff ( ): 2841346 Jf Sv ff Absolute Maximum Ratings/Ta=25°C ff Sy unit ee Collector to Base Voltage Vero FL Se” VE Collector to Emitter Voltage VCEO Af & (50, ve Emitter to Base Voltage VEBO fi ea re av Collector Current ites ff & BN" omA Collector Current(Pulse) Top é¢ “Sy (-1200 vigma Collector Dissipation Po ee en NY 300" mw Junction Temperature Tj fé £ _— 180" ° Storage Temperature Tstg fe gy 58 to #150 °c Electrical Charactaristics/T 925°C ff ee @ ff min typ) max unit Collector Cutoff Current topq’.” — Veae(J4OV, te=0", (10.1 HA Collector Cutoff Current Ick" —-a¥ce=BSI40V, 18*0 (10.5 pA Emitter Cutoff Current leBO 2, VEBaleisv, ted {—)70(-)113{-}150 BA DC Current Gain DFE go, WE-5V/1e=(-)5mA 50 Gain-bandwidth product MAT a VCE -I0Y, Ier(-15mA 250 MHz Output Capacitance oa. “SV cps 10V, f= 1MHz 3.7 pF Collector to Emitter Saturdtion ——V@e(sat)”— 1o=(=)10mA, Ip={—)0.6mA {10.1 (-10.3 v Voltage ff A el of ee ity Xp oe Continued on next page. Electrical Connestion if ee fe Case Outline 2033 ae or AP Bugs (unit: mm) Sel , YL ve ——— 2 | ne ee e O4 y 2 Collector pie nen E: Emitter SANYO: SPA Specifications and information herein are subject to change without notice. SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-kil, TOKYO, 110 JAPAN 3237KI/ 3075KI/ 4143K1. 1S, No. 1268-1/2
Continued from preceding page. min typ max unit Collector to Base Breakdown ViBR)CBO Ic#(—}10pA, IE*0 {-150 v Voltage Collector to Emitter Breakdown ViBRICEO Ic=(—HO00uA, REE=e (-150 v Voltage en Input Off Voltage Viiott) —- Vee=(-I5V, Ic=1-1100A(-J0.8(E.TI)1.8 OV Input On Voltage Vion} VoE={-)0.2V, Ic=(-}5mA (401-11.9')3:0, v Input Resistance Ry fe 2 “29... k@ Input Resistance Ratio Ry/R2 p pos oto, 1.1, “ = Sample Application Cirouit “ee nd ff Input ON-state voltage: 3V or more ee hw fe eur wee cay! ff Input OF F-state voltage: 0.8V or less } ‘ * éf oe a ‘Gee PNP, the'polarity is reversed.) a et, Yifon) = Ie if .@) AA€ ~ Vilotf >i]TT TT TT] tte) | ait| [| tI Te A 5. \\ _ ae et NA extesh es) 8 i+] 2
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