2SC3399 SANYO
Document overview
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Technical content
No.1287C 28A1345/2SC3399 te eitek 5 PNP/ NPN Epitaxial Planar Silicon Transistors hes Wea Switching Applications fist sbeste OF (with Bias Resistance) Switching circuit, inverter, interface circuit, driver ff © ®& ff Features oes fe Re fe + Built-in bias resistor (R4=47k2, R2=47kQ)}. if we ff + Small-sized package (SPA). ff Fn ee ( ): 2841345 ff Sew ff Absolute Maximum Ratings/T,=25°C oe oe Coe Collector to Base Voltage Vso FE gh WO VS Collector to Emitter Voltage VcEO es Emitter to Base Voltage VEBO ff. a eh vy Collector Current tc LS EX Pa900- "A Collector Current(Pulse) Icp if Sy” (9200 yma Collector Dissipation Po y if Bp 300°.” mW dunction Temperature Tj ff S%®*, 10" °c Storage Temperature Tstg ff Sy 785 to¥'150 °c Electrical Charactoristics/Tg=25°C ffi £8 < #4, min typ max unit Collector Cutoff Current IcBQ" Vgp=t-140V, IEx0 & (-)0.1 pA Collector Cutoff Current (ckO” —_, VCBMC}40V, peo" (-}0.5 BA Emitter Cutoff Current 1eB0 . Mgpot)8v, léx0 {-)30 (-)53 (-)80 WA DC Current Gain cafe — “SV CESI-)6vyle=(-)5ma 50 Gain-bandwidth product PAT QSsoVde=(-)0y, Ic=(-)5mA 250 MHz ff Sey ff (200) Output Capacitance ee Seb. Sey VepstShov, f= 1MHz 37 pF Collector to Emitter Saturation SM ge(sat Ig={-}5mA, Ip=(—)0.25mA {-}0.1 (-)0.3 Vv Voltage Jaa éf ff gry, % J ° Continued on next page. Electrical Conngévon Case Outline 2033 ff SOS’ éé Joop 15.0 Sia ce Pn qt = at? Joc SA, “A ay ~ + -s “ Ss ye 3 04 ‘a B: Base “sae Emitter Emitter C: Collector paw nen f: Emitter SANYO: SPA Specifications and information herein are subject to change without notice. SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg.. 1-10. 1 Chome, Ueno, Taitu-ku, TOKYO, 110 JAPAN 3237KE/ 3075KI/ 4143K), 1S. i No. 1287-1/2
Continued from preceding page. min typ max — unit Collector to Base Breakdown Vipricao 'c=(-)10yA, IEe-0 (50 v Voltage Collector to Emitter Breakdown ViBRICEO Ic=(—}100KA, RgEe=- {-150 a v Voltage os, Input Off Voltage Vitor) = VoEs(-IBV, Io*t-}100vA (10.8.4 418 v Input On Voltage Viton) = VCE=(-10.2V, I¢={-}5mA {1,012.5 (18. Input Resistance Rt vm f 62. "kD Input Resistance Ratio Ry/RQ FAP AM WW OS mm Sample Application Ciroult ‘ec ff. Nd ff Input ON-state voltage: 5V or more oe SQ” oe Input OFF-state voltage: 0.8V or less ba)’ . ff J A Rag PNB? ne polatty is reversed.) ry e Ebi ff Vi(on) = Ic oye th Ag’= Vi(ofe Veg =0.: sain fe = ee ee f Fa a 4 pA Fie: ax i eee ee -—-—| rs For PNP, minuesignis omitted} f- ———1-For PNP, minus sign is omitted o, PT To UR ve ° OF 08 re) ry 20 Collector Current IG mA” yo Input Off Voltage, V1 (off) — V Pe en) ee NE TT TT aD el N evita Terry Og IN sue ster) gm X 7S LEP Te TTT Bw mo PS 4] ‘i N LN rertnmiouesgnicomnea| §— 8 “TT | PT > > ee a S10 0160 Bo "Cot stor Current, I¢— mA” ‘Ambient Temperature, Ty — °C