2SA1338_15 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Features
Adoption of FBET process. High breakdown voltage : VCEO=-50V. Large current capacitiy and high fT. Ultrasmall-sized package permitting sets to be smallsized, slim. Absolute Maximum Ratings Ta = 25 tinUgnitaRlobmySretemaraP Vegatlovesab-rotcelloC CBO -60 V Vegatlovrettime-rotcelloC CEO -50 V Vegatlovesab-rettimE EBO -5 V ItnerrucrotcelloC C -500 mA I)eslup(tnerrucrotcelloC CP -800 mA PnoitapissidrotcelloC C 200 mW TerutarepmetnoitcmuJ j 150 TerutarepmetegarotS stg -55 to +150 Electrical Characteristics Ta = 25 PNP Transistors 2SA1338 Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -60 Collector- emitter breakdown voltage VCEO Ic= -1 mA， IB=0 -50 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -5 Collector-base cut-off current ICBO VCB= -40 V , IE=0 -100 Emitter cut-off current IEBO VEB= -4V , IC=0 -100 Collector-emitter saturation voltage VCE(sat) IC=-100 mA, IB=- 10mA 0.15 0.4 Base - emitter saturation voltage VBE(sat) IC= -100 mA, IB= -10mA 0.8 1.2 DC current gain hFE VCE= -5V, IC= -10mA 100 560 Turn-on time ton 70 Storage time tstg 400 Fall time tr 50 Common base output capacitance Cob VCB= -10V , IC= -50mA 5.6 pF Transition frequency fT VCE= -10V ,f=1MHz
200 MHz
VCC=-20V,IC=-10|B1=-10|B2=100mA V V ns nA ■ Classification of hfe
- Complementary to 2SC3392 Type 2SA1338-AL4 2SA1338-AL5 2SA1338-AL6 2SA1338-AL7 Range 100-200 140-280 200-400 280-560 Marking AL4 AL5 AL6 AL7 0.4+0.1 -0.1 2.9+0.1 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.1 2.4+0.1 -0.1 1.3+0.1 -0.1 0-0.1 0.38+0.1 -0.1 0.97+0.1 -0.1 0.55 0.4 1.Base 2.Emitter 3.collector 1 2 Unit: mmSOT-23 0.1+0.05 -0.01
www.kexin.com.cn2 Transistors PNP Transistors 2SA1338 ■ Typical Characterisitics
www.kexin.com.cn 3 Transistors PNP Transistors 2SA1338 ■ Typical Characterisitics