2SA1330-HF_15 KEXIN
Document overview
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Technical content
Features
High DC current gain. High voltage. Absolute Maximum Ratings Ta = 25 tinUgnitaRlobmySretemaraP Vegatlovesab-rotcelloC CBO -200 V Vegatlovrettime-rotcelloC CEO -200 V Vegatlovesab-rettimE EBO -5 V ItnerrucrotcelloC C -100 mA PnoitapissidrewoplatoT T 200 mW TerutarepmetnoitcnuJ j 150 TerutarepmetegarotS stg -55 to +150
- Complementary to 2SC3360-HF ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -200 Collector- emitter breakdown voltage VCEO Ic= -1 mA， IB=0 -200 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -5 Collector-base cut-off current ICBO VCB= -200 V , IE=0 -100 Emitter cut-off current IEBO VEB= -5V , IC=0 -100 Collector-emitter saturation voltage * VCE(sat) IC=-50 mA, IB=- 5mA -0.21 -0.3 Base - emitter saturation voltage * VBE(sat) IC=-50 mA, IB=- 5mA -0.8 -1.2 Base - emitter voltage * VBE VCE= -10V, IC= -10mA -0.6 -0.65 -0.7 hFE（1） VCE= -10V, IC= -10mA 90 200 450 hFE（2） VCE= -10V, IC=-50mA 50 195 Turn-on time tr 0.16 Storage time ts 1.3 Turn-off time toff 0.18 Collector output capacitance Cob VCB= -30V, IE= 0,f=1MHz 3.6 pF Transition frequency fT VCE= -10V, IE= 10mA 120 MHz VCC=-10V,VBE(off)=2.5V IC=-10mA,IB1=IB2=-1.0mA DC current gain * V us nA V * Pulse test: tp 350 us; duty cycle 0.02. ■ Classification of hfe(1) Type 2SA1330-O5-HF 2SA1330-O6-HF 2SA1330-O7-HF Range 90-180 135-270 200-450 Marking O5 F O6 F O7 F 0.4+0.1 -0.1 2.9+0.1 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.1 2.4+0.1 -0.1 1.3+0.1 -0.1 0-0.1 0.38+0.1 -0.1 0.97+0.1 -0.1 0.55 0.4 1.Base 2.Emitter 3.collector 1 2 Unit: mmSOT-23 0.1+0.05 -0.01
- Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish PNP Transistors 2SA1330-HF
www.kexin.com.cn ■ Typical Characterisitics PNP Transistors 2SA1330-HF
www.kexin.com.cn 3 Transistors ■ Typical Characterisitics PNP Transistors 2SA1330-HF