2SA1330-3_15 KEXIN
Document overview
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Technical content
Features
High DC current gain. High voltage. Absolute Maximum Ratings Ta = 25 tinUgnitaRlobmySretemaraP Vegatlovesab-rotcelloC CBO -200 V Vegatlovrettime-rotcelloC CEO -200 V Vegatlovesab-rettimE EBO -5 V ItnerrucrotcelloC C -100 mA PnoitapissidrewoplatoT T 200 mW TerutarepmetnoitcnuJ j 150 TerutarepmetegarotS stg -55 to +150
- Complementary to 2SC3360 ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -200 Collector- emitter breakdown voltage VCEO Ic= -1 mA， IB=0 -200 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -5 Collector-base cut-off current ICBO VCB= -200 V , IE=0 -100 Emitter cut-off current IEBO VEB= -5V , IC=0 -100 Collector-emitter saturation voltage * VCE(sat) IC=-50 mA, IB=- 5mA -0.21 -0.3 Base - emitter saturation voltage * VBE(sat) IC=-50 mA, IB=- 5mA -0.8 -1.2 Base - emitter voltage * VBE VCE= -10V, IC= -10mA -0.6 -0.65 -0.7 hFE（1） VCE= -10V, IC= -10mA 90 200 450 hFE（2） VCE= -10V, IC=-50mA 50 195 Turn-on time tr 0.16 Storage time ts 1.3 Turn-off time toff 0.18 Collector output capacitance Cob VCB= -30V, IE= 0,f=1MHz 3.6 pF Transition frequency fT VCE= -10V, IE= 10mA 120 MHz VCC=-10V,VBE(off)=2.5V IC=-10mA,IB1=IB2=-1.0mA DC current gain * V us nA V PNP Transistors 2SA1330 * Pulse test: tp 350 us; duty cycle 0.02. ■ Classification of hfe(1) 0.4+0.1 -0.1 2.9+0.2 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.2 2.8 +0.2 -0.1 +0.2 -0.1 1 2 Unit: mmSOT-23-3 1.6 1. Base 2. Emitter 3. Collector 0.4 0.15 +0.02 -0.02 0.55 0-0.1 0.68 +0.1 -0.1 1.1 +0.2 -0.1 Type 2SA1330-O5 2SA1330-O6 2SA1330-O7 Range 90-180 135-270 200-450 Marking O5 O6 O7
www.kexin.com.cn PNP Transistors 2SA1330 ■ Typical Characterisitics
www.kexin.com.cn 3 Tran sistors PNP Transistors 2SA1330 ■ Typical Characterisitics