2SA1330 NEC

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Secrumtews — / 2SA1330 | HIGH VOLTAGE AMPLIFIER AND SWITCHING | | PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD | PACKAGE DIMENSIONS FEATURES in millimeters @ High Voltage: Vceo = —200 V P 28402 © High DC Current Gain: hee = 90 to 450 z 15 0.65385 @ “Complementary to 2SC3360 bs t Ho | | ABSOLUTE MAXIMUM RATINGS 2 : ° t 9 at] ane Maximum Voltages and Current (Tq = 25 °C) sos “tee | Collector to Base Voltage Veo —200 v s go | |e Collector to Emitter Voltage Veo -200 v t+ Bs Emitter to Base Voltage VeBo 5 v Collector Current (DC) i -100 mA Maximum Power Dissipation a Marking Total Power Dissipation S| at 25 °C Ambient Temperature Pr 200 mW @ < Z Maximum Temperatures ra 4 3 Junction Temperature Tj 150 °c - Storage Temperature Range Tstg —55to+150 °C | 1. emitor $ 2) Base é 3. Collector ELECTRICAL CHARACTERISTICS (Tg = 25°C) [_chanacrenisric | svwaou_| wn [We [wax [ oN | TeST CONDITION @ | ciecttcomn eno [ee fon ep zn [seo EmiverVotowe | Vee | -08 | 065 [ 07 | V[ voe==10v.tc=—10ma | | cots atratn Vorowe | Veet || -0a" | 03 |v | ige=Soma.igs-0ma | [ese saturation Voge | Veet || -08 | =12 |v] ig =s0ma,ig=-50mA | {cain endwiath Paice [|| a0 || WH | Veg=—f0V.te=10ma | Fouturcameciancs | ew || as || oF | vep=-a0vite=0.t= 10mm * Pulsed: PW S350 us, Duty Cycle $2% | hee Classification [trex | s0%0180 | 135t0270 | 20010450_| NEC 7 bility for any circuits shown or represent that : they ave free from patent infringement. NEC Corporation ; © 1985 NEC Corporation

2SA1330 _ NEC accrron vevice TYPICAL CHARACTERISTICS (Ta = 25 °C) lid vs. COLLECTOR CURRENT vs. @ AMBIENT TEMPERATURE. COLLECTOR TO EMITTER VOLTAGE

250 Ty v7 7 7

4 Z| A

40) 7 = 200) V gp 4 = 1 < “Ny gy § fa 3 ; fa | 8 150 ¥ 30 ie GOT 300 wA . 3 : Wy 3100 3 20 Lye ZT 200 & E / U7 2 oS | L 50] ~ 10 17 Loot Ss Ca | > | ° 40 80 120 160 200 ° 1 2 3 4 5 . | Ta— Ambient Temprature—"C VcE—Collector to Emitter Voltage—V COLLECTOR CURRENT vs. COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE BASE TO EMITTER VOLTAGE | 100 i oe eo es Le | 4 ee oy A 8 a A ee : <

7 Zakeay LL eT Tel

5 6 =m C7 2 ee é [7 S390) TP Pr yr | é a —| 5 FR | 6 === eee ° Lay A| oe ee ee ee 2 -o3f ++} = ee ane i PCC -O1 ° 40 80 120 160 200 VBE —Base to Emitter Voltage—V @ | VcE—Collector to Emitter Voltage~V BASE AND COLLECTOR SATURATION VOLTAGE vs. COLE TON CUNT COLLECTOR CURRENT SSS esi) SS = =S ES 6] 50 ero 7. ESS Seat —_ { e= Fee ee ooo TIT) 24 ao — ooo a a 33 ~C TU Tir Tin) eee 62 CIC CO Fes a Cs | = oof LU 53 os}

2 LoL UCC ooo

2of} — TTT FF 63h To on) A KA See ee PETITE SSS Sa ae oon ER EHH or 03 10 #30 10 30 100 or 03 10 30 1030 I¢—Collector Current —mA I¢—Collector Current—mA

NEC sictron vevice 2SA1330 t GAIN BANDWIDTH PRODUCT vs. OUTPUT CAPACITANCE vs, 1 EMITTER CURRENT COLLECTOR TO BASE VOLTAGE 1000 -——+ ——T | Sas Co on) | Fe 20 RN | a a So a a & 5 00 ST ede tan HHH 4 OPS 3 see 8 ===. {TT s Coops. eee oe & —— Ry 3 sop Cee roo |_| pert vers. V NT 2° See | 5 § EE ess 3 50 a a 5 20 8 80 3 é ~ | TTT TT 2 es I S rot tt TL _ | E od Po Se a atm il Aa e i ere Fri J 4 1020 50 10 20 50-100 -20 -8.0 -10 ~20 =50 100 =200 Ig—Emitter Current—mA Vcp—Collector to Base Voltage~V SWITCHING TIME vs. COLLECTOR CURRENT 3.0 Vec=—10 V oo | LTT eerie, PC Beer

10 Jel

© osha @ NN 2 oof NDNUT TT & NJ Ny f NWN

0.08 ERS ot

0.06} SE re Ne 4 oa EC SS | Lo TTT ENT TTT) | e -10 -20 —5.0 -10 20 —50 -100 : I¢—Collector Current— mA

2SA1330 : NEC sscron vevce a NEC Corporation INTERNATIONAL ELECTRON DEVICES Div. SUMITOMO MITA Building, 37-8, Shiba Gochome, Minato-ku, Tokyo 108, Japan Tel: Tokyo 456—3111 Telex Address: NECTOK J22686 Cable Address: NEC TOKYO TC-1631 JULY—15—85M Printed in Japan