2SA1319 SANYO

Document overview

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Technical content

Features

  • High breakdown voltage. * Excellent hfe linearity. + Wide ASO and highly resistant to breakdown. + Adoption of MBIT process. ( ): 2SA1319 Absolute Maximum Ratings/Ta = 25°C unit Collector to Base Voltage VcBoO (-}180 v Collector to Emitter Voltage VcEO (-)160 Vv Emitter to Base Voltage VEBO (6 v Collector Current Ic (-)0.7 A Collector Current(Pulse) Icp (-)1.5 A Collector Dissipation Po 700 mw Junction Temperature Tj 150 °c Storage Temperature Tstg —55 to +150 °c Electrical Characteristics/T g=25°C min typ max — unit Collector Cutoff Current IcBo. Vcp=(-)120V, IE=0 (-)0.1 pA Emitter Cutoff Current lEBO Vep=(—)4V, Ic=0 {-)0.1 BA DC Current Gain hFE(1) VcE=(-)5V, Ic=(—)100mA. 100% 400* : hRE(2) — VCE=(-)5V, I¢={-)10mA 80 Gain-bandwidth product fT VcE=(—)10V, Ic=(—)50mA. 120 MHz Common Base Output Capacitance cob Vcp=(—)10V (11)8 pF Collector to Emitter Saturation VCE (sat) Iq=(-)250mA, tg=(—)25mA 012 04 Vv Voltage (0.20) (0.5) Vv Base to Emitter Saturation Voltage Vpe{sat) !¢=(—)250mA, !p=(—)25mA (-)0.85 (-)1.2 Vv Collector to Base Breakdown ViBRICBO !c=(—)10uA, IE=0 (-)180 v Voltage Collector to Emitter Breakdown ViBR)CEO !c=(—)1mA, ReEe= (-)160 Vv Voltage Emitter to Base Breakdown Voltage V(gR)EBO !E=(—)10HA, ic=0 (6 Vv Turn-on Time ton At specified test circuit (60)50 ns Storage Time tstg " (900) 1000 ns Fall Time tt " (60)60 ns %; The 2SA1319/2SC3332 are classified by 100mA hre as follows: 100A 200 | 140 +S 280 | 200 T 400 | PackageDimensions (unit: mm) 20034 Switching Time Test Circuit (For PNP, the pws 1B 20 0.44 polarity is iiss rs (Pp ° a) 0.45 tt reversed.) om q) bey Lot, (bp ied ' 045 . | 201g) = —201g2=To= S00mA oy ae beso soa Leo! Qy ov JEDEC: TO-92 B. Base . EIAJ : SC-43 c. Coll Unit(Resistance : 0 , Capacitance : F) SANYO: NP Ps Emitter SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg.,1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN “— “| 3207KI/N275KI/3135KI/O183KI,TS No.1334-1/3°

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| rT oy i | Fa hop ft ia jo eg | i ! | i | S ii i | ed a in Nee 6 | t | ' & 200 +-—+- ~ i ic} ° 20 «0 6 ec 0 120 ° “Oo 6 Ambient Temperature, Tg — C No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. W Anyone purchasing any products described or contained herein for an above-mentioned use shall: © Accept full responsibility and indemnify and defend SANYO ELECTRIC CO, LTD,, its affiliates, Ps y subsidiaries and distributors and ali their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: ® Not impose any responsibility for any fault or negligence which may be cited in any such claim or Itigation on SANYO ELECTRIC CO, LTO, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is acourate and reliable, but no guarantees "are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties, No. 1334-3/3