2SA1314 KEXIN
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:V CE(sat) = -0.5V (max) (IC =- 2 A ,IB = -50mA) Small Flat Package Complementary to 2SC2982 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector Cut-off Current I CBO VCB = -20V , IE = 0 -100 nA Emitter Cut-off Current I EBO VEB =- 6 V,IC = 0 -100 nA Collector-Emitter Breakdown Voltage V (BR)CEO IC = -10mA , IB =0 - 1 0 V Emitter-Base Breakdown Voltage V (BR)EBO IE =- 1 m A,IC =0 - 6 V VCE =- 1 V,IC = -0.5A 140 600 VCE =- 1 V,IC = -4A 60 120 Collector-Emitter Saturation Voltage V CE(sat) IC =- 2 A,IB = -50mA -0.2 -0.5 V Base-Emitter Voltage V BE VCE =- 1 V,IC = -2A -0.83 -1.5 V Transition Frequency f T VCE =- 1 V,IC = -0.5A 140 MHz Collector Output Capacitance C ob VCB = -10V , IE =0,f=1 M H z 5 0 p F DC Current Gain h FE Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage V CBO -20 V Collector-Emitter Voltage V CEO -10 V Emitter-Base Voltage V EBO -6 V Collector Current (DC) I C -2 A Collector Current (Pulsed) *1 I CP -4 A Base Current I B -2 A PC 500 PC *2 1000 Jumction temperature T j 150 Storage temperature Range T stg - 5 5t o+ 1 5 0 *1 Pulse test: pulse width = 10ms (max), duty cycle = 30% (max) *2 Mounted on ceramic substrate (250 mm2 x 0.8 t) Collector Power Dissipation mW
www.kexin.com.cn2 SMD Type Transistors Electrical Characteristics Curves 2SA1314 hFE Classification Marking Rank A B C hFE 140 280 200 400 300 600 T