2SA1313_15 KEXIN

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High voltage: VCEO = -50 V (min) Small package Electrical Characteristics Ta = 25 Absolute Maximum Ratings Ta = 25 tinUgnitaRlobmySretemaraP Vegatlovesab-rotcelloC CBO -50 V Vegatlovrettime-rotcelloC CEO -50 V Vegatlovesab-rettimE EBO -5 V ItnerrucrotcelloC C -500 mA ItnerrucesaB B -50 mA PnoitapissidrewoprotcelloC C 200 mW TerutarepmetnoitcnuJ j 150 TerutarepmetegarotS stg -55 to +150 ■ Classification of hfe(1) PNP Transistors 2SA1313 Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100uA， IE=0 -50 Collector- emitter breakdown voltage VCEO Ic= -1 mA， IB=0 -50 Emitter - base breakdown voltage VEBO IE= -100uA， IC=0 -5 Collector-base cut-off current ICBO VCB= -50 V , IE=0 -0.1 Emitter cut-off current IEBO VEB= -5V , IC=0 -0.1 Collector-emitter saturation voltage VCE(sat) IC=-100 mA, IB=-10mA -0.25 Base-emitter saturation voltage VCB(sat) IC=-100 mA, IB=-10mA -1.2 Base - emitter voltage VBE IC= -100 mA VCE=-1V, -1 hFE(1) VCE= -1V, IC= -100mA 70 240 VCE=- 1V, IC= -800mA O 25 Y 40 Collector output capacitance Cob VCB= -6V, IE= 0,f=1MHz 13 pF Transition frequency fT VCE= -6V, IC= -20mA 200 MHz DC current gain V V uA hFE(2)

  • Complementary to 2SC3325 Type 2SA1313-O 2SA1313-Y Range 70-140 120-240 Marking ACO ACY 0.4+0.1 -0.1 2.9+0.1 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.1 2.4+0.1 -0.1 1.3+0.1 -0.1 0-0.1 0.38+0.1 -0.1 0.97+0.1 -0.1 0.55 0.4 1.Base 2.Emitter 3.collector 1 2 Unit: mmSOT-23 0.1+0.05 -0.01

www.kexin.com.cn2 Transistors PNP Transistors 2SA1313 ■ Typical Characterisitics 01-1-1.0- 100 001-01-1- 200 250 300 350 400 450 001-01-1- 100 1000 0 25 50 75 100 125 150 100 150 200 250 -0.1 -1 -10 -100 -200 -400 -600 -800 -1000 -0.1 -1 -10 -100 -100 -200 -300 -400 -500 -50 -100 -150 -200 -200 -400 -600 -800 -1000 -0.1 -10 -100 f=1MHz IE=0 / IC=0 Ta=25℃ REVERSE VOLTAGE V (V) CAPACITANCE C (pF) VCB / VEBCob / Cib — — Cib Cob -20 TRANSITION FREQUENCY fT (MHz) COLLECTOR CURRENT I C (mA) VCE=-6V Ta=25℃ IC fT — — -500 VCE= -1V Ta=100℃ Ta=25℃ COLLECTOR CURRENT IC (mA) DC CURRENT GAIN hFE IChFE — — COLLECTOR POWER DISSIPATION Pc (mW) AMBIENT TEMPERATURE Ta ( )℃ Pc —— Ta -500 COLLECTOR CURRENT IC (mA) BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) Ta=25℃ Ta=100℃ β=10 ICVBEsat — — -500 Ta=25℃ Ta=100℃ β=10 VCEsat —— IC COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) COLLECTOR CURRENT IC (mA) COMMON EMITTER Ta=25℃ -1mA -0.9mA -0.8mA -0.7mA -0.6mA -0.5mA -0.4mA -0.3mA -0.2mA IB=-0.1mA COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (mA) Static Characteristic VCE=-1V Ta=25℃ Ta=100℃ BASE-EMITTER VOLTAGE VBE(mV) COLLECTOR CURRENT IC (mA) VBE —— IC -500