2SA1310

2SC3312 PANASONIC

Document overview

• Manufacturer or author: Provided By digicamel.com
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Technical content

Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Complementary to 2SA1310 n Features l Optimum for high-density mounting. l Allowing supply with the radial taping. l Low noise voltage NV . n Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature 1:Emitter 2:Collector EIAJ:SC–72 3:Base New S Type Package 4.0–0.2 marking 2.54–0.15 1.271.27 3.0–0.215.6–0.5 2.0–0.2 0.7–0.1 0.45–0.1 123 +0.2 Symbol V CBO V CEO V EBO ICP IC PC Tj Tstg Ratings 200 100 300 150 –55 ~ +150 Unit V V V mA mA mW n Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Transition frequency Noise voltage Symbol I CBO ICEO V CBO V CEO V EBO hFE * V CE(sat) V BE fT NV Conditions V CB = 20V , IE = 0 V CE = 20V , IB = 0 IC = 10mA, IE = 0 IC = 2mA, IB = 0 IE = 10mA, IC = 0 V CE = 5V , IC = 2mA IC = 100mA, IB = 10mA V CE = 1V , IC = 30mA V CB = 5V , IE = –2mA, f = 200MHz V CE = 10V , IC = 1mA, GV = 80dB R g = 100kW , Function = FLAT min 180 typ 200 max 0.1 700 150 Unit mA mA V V V V V MHz mV *hFE Rank classification Rank R S T hFE 180 ~ 360 260 ~ 520 360 ~ 700

PC — Ta I C — V CE IC — V BE V CE(sat) — IC hFE — IC fT — IE C ob — V CB NV — I C 0 160 40 120 80 14020 100 60 500 400 300 200 100 Ambient temperature Ta (˚C) Collector power dissipation PC (mW ) 01 2 10826 4 240 200 160 120 Ta=25˚C 350mA 200mA 150mA 100mA 330mA 250mA 50mA IB=400mA Collector to emitter voltage VCE (V) Collector current IC (mA ) 120 100 VCE =5V Ta=75˚C –25˚C 25˚C Base to emitter voltage VBE (V) Collector current IC (mA ) 0.1 1 10 1000.3 3 30 0.01 0.03 0.1 0.3

100 IC /IB=10

Ta=75˚C 25˚C –25˚C Collector current IC (mA ) Collector to emitter saturation voltage VCE(sat) (V) 0.1 1 10 1000.3 3 30 1000 800 600 400 200 VCE =5V Ta=75˚C 25˚C –25˚C Collector current IC (mA ) Forward current transfer ratio hFE 400 300 100 250 350 200 150 VCB =5V Ta=25˚C Emitter current IE (mA ) Transition frequency fT (MHz ) 1 3 10 30 100 IE=0 f=1MHz Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) 0.01 0.03 0.1 0.3 1 240 200 160 120 ICE =10V G V=80dB Function=FLAT Ta=25˚C 4.1kW R g=100kW 22kW Collector current IC (mA ) Noise voltage NV (mV )