2SA1263N SAVANTIC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 4
Technical content
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA1263N
DESCRIPTION
- With TO-3P(I) package
- Complement to type 2SC3180N
- 2SA1263 with short pin
APPLICATIONS
- Power amplifier applications PINNING PIN DESCRIPTION
1 Emitter
2 Collector;connected to
3 Base
Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -80 V VCEO Collector- emitter voltage Open base -80 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -6 A IB Base current -0.6 A PT Total power dissipation T C=25 60 W Tj Junction temperature 150 Tstg Storage temperature -55~150 Fig.1 simplified outline (TO-3P(I)) and symbol
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA1263N CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=-50mA ,IB=0 -80 V VCEsat Collector-emitter saturation voltage I C=-5A; IB=-0.5A -1.0 -2.0 V VBE Base-emitter on voltage I C=-3A ; VCE=-5V -0.95 -1.5 V ICBO Collector cut-off current V CB=-80V; IE=0 -5 µA IEBO Emitter cut-off current V EB=-5V; IC=0 -5 µA hFE-1 DC current gain I C=-1A ; VCE=-5V 55 160 hFE-2 DC current gain I C=-3A ; VCE=-5V 35 fT Transition frequency I C=-1A ; VCE=-5V 30 MHz Cob Output capacitance I E=0 ; VCB=-10V ;f=1MHz 290 pF hFE-1 Classifications R O 55-110 80-160
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA1263N PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA1263N