2SA1263N ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 4
Technical content
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1263N
DESCRIPTION
- With TO-3P(I) package Fig.1 simplified outline (TO-3P(I)) and symbol
- Complement to type 2SC3180N
- 2SA1263 with short pin
APPLICATIONS
- Power amplifier applications PINNING PIN DESCRIPTION
1 Emitter
2 Collector;connected to
3 Base
Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -80 V VCEO Collector-emitter voltage Open base -80 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -6 A IB B Base current -0.6 A PT Total power dissipation TC=25℃ 60 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1263N CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ,IB=0 -80 V VCEsat Collector-emitter saturation voltage IC=-5A; IB=-0.5A -1.0 -2.0 V VBE Base-emitter on voltage IC=-3A ; VCE=-5V -0.95 -1.5 V ICBO Collector cut-off current VCB=-80V; IE=0 -5 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -5 μA hFE-1 DC current gain IC=-1A ; VCE=-5V 55 160 hFE-2 DC current gain IC=-3A ; VCE=-5V 35 fT Transition frequency IC=-1A ; VCE=-5V 30 MHz Cob Output capacitance IE=0 ; VCB=-10V ;f=1MHz 290 pF hFE-1 Classifications R O 55-110 80-160
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1263N PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1263N