2SA1263 NJSEMI
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
J , U na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SA1263
DESCRIPTION
- Low Collector Saturation Voltage- : VCE(sa.r -2.0V(Min) @lc= -5A
- Good Linearity of hFE
- Complement to Type 2SC3180
APPLICATIONS
- Power amplifier applications
- Recommend for 40W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25'C) PIN 1.BASE 2.COLLECTOR 3. BETTER TC-3PI package SYMBOL VCBO VCEO VEBO Ic IB PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation @ TC=25'C Junction Temperature Storage Temperature Range VALUE -80 -80 -0.6 150 -55-150 UNIT V V V A A W - B <Qi :* " A ?i._ „ * H K -*-N -*• C •*- S-- •*- - t ; : i '"" :'k '; + *-^J DIM A B C D F H J K L N Q R S T U z mm MIN 19,60 15,30 4.00 0.90 3.20 2.SO 0,50 19.90 1.20 10,80 4,40 3.30 1.40 1,00 2.10 7.90 MAX 20,10 15.70 4.60 1.10 3.40 3.10 0.70 21.30 2,20 11.00 4.60 3.35 1.60 1.20 2.30 9.10 C i -*. *«-L «--^D NJ Semi-Coikluctors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going lo press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheels are current before placing orders. Quality Semi-Conductors
Silicon PNP Power Transistor 2SA1263
ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified SYMBOL V(BR)CEO VcE(sat) VBE(on) ICBO IEBO hpE-1 hFE-2 COB ft PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Output Capacitance Current-Gain — Bandwidth Product CONDITIONS lc= -50mA; le= 0 lc= -5A; IB= -0.5A lc= -3A ; VCE= -5V VCB= -80V; |E= 0 VEB= -5V; lc= 0 lc= -1A; VCE= -5V lc= -3A; VCE= -5V IE=0; VCB= -10V; flest= 1 .0MHz lc=-1A; VCE= -5V MIN -80 TYP. 290 MAX -2.0 -1.5 160 UNIT V V V MA UA PF MHz hpE-1 Classifications R 55-110 O 80-160