2SA1263 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
INCHANGE Semiconductor isc Product Specification isc Website：www.iscsemi.cn isc & iscsemi is registered trademark 1 isc Silicon PNP Power Transistor 2SA1263
DESCRIPTION
- Low Collector Saturation Voltage- : VCE(sat)= -2.0V(Min) @IC= -5A
- Good Linearity of hFE
- Complement to Type 2SC3180
APPLICATIONS
- Power amplifier applications
- Recommend for 40W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -6 A IB Base Current-Continuous -0.6 A PC Collector Power Dissipation @ TC=25℃ 60 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃
INCHANGE Semiconductor isc Product Specification isc Website：www.iscsemi.cn isc & iscsemi is registered trademark 2 isc Silicon PNP Power Transistor 2SA1263
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0 -80 V VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A -2.0 V VBE(on) Base-Emitter On Voltage IC= -3A ; VCE= -5V -1.5 V ICBO Collector Cutoff Current VCB= -80V; IE= 0 -5 μ A IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -5 μ A hFE-1 DC Current Gain IC= -1A; VCE= -5V 55 160 hFE-2 DC Current Gain IC= -3A; VCE= -5V 35 COB Output Capacitance IE=0; VCB= -10V; ftest= 1.0MHz 290 pF fT Current-Gain—Bandwidth Product IC=-1A; VCE= -5V 30 MHz hFE-1 Classifications R O 55-110 80-160