2SA1257-HF_15 KEXIN

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 3

Technical content

Features

High breakdown voltage. Small output capacitance. Absolute Maximum Ratings Ta = 25 tinUgnitaRlobmySretemaraP Vegatlovesab-rotcelloC CBO -180 V Vegatlovrettime-rotcelloC CEO -160 V Vegatlovesab-rettimE EBO -5 V ItnerrucrotcelloC C -80 mA I)eslup(tnerrucrotcelloC CP -150 mA PnoitapissidrotcelloC C 200 mW TerutarepmetnoitcmuJ j 125 TerutarepmetegarotS stg -55 to +125

  • Very small-sized package permitting the 2SA1257-HF/ 2SC3143-HF applied sets to be made small and slim. ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -180 Collector- emitter breakdown voltage VCEO Ic= -1 mA， RBE=∞ -160 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -5 Collector-base cut-off current ICBO VCB= -120 V , IE=0 -100 Emitter cut-off current IEBO VEB= -4V , IC=0 -100 Collector-emitter saturation voltage VCE(sat) IC=-30mA, IB=- 3mA -0.7 Base - emitter saturation voltage VBE(sat) IC=-30mA, IB=- 3mA -1.2 Base - emitter voltage VBE VCE= -5V , IC=-10mA -1.5 DC current gain hFE VCE= -5V, IC= -10mA 60 270 Turn-on time ton 0.15 Storage time tstg 0.95 Fall time tf 0.15 Collector output capacitance Cob VCB= -10V, f-1MHz 2.4 3.2 pF Transition frequency fT VCE= -10V, IC= -10mA 130 MHz See Test Circuit. V V us nA ■ Classification of hfe Type 2SA1257-G3-HF 2SA1257-G4-HF 2SA1257-G5-HF Range 60-120 90-180 135-270 Marking G3 F G4 F G5 F 0.4+0.1 -0.1 2.9+0.1 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.1 2.4+0.1 -0.1 1.3+0.1 -0.1 0-0.1 0.38+0.1 -0.1 0.97+0.1 -0.1 0.55 0.4 1.Base 2.Emitter 3.collector 1 2 Unit: mmSOT-23 0.1+0.05 -0.01
  • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish PNP Transistors 2SA1257-HF

www.kexin.com.cn PW=20µs D.C.″1% INPUT 20V 50Ω RB 2kΩ IB1 IB2 100µF 470µF --5V 10IB1=--10IB2=IC=10mA VR + + RL (For PNP, the polarity is reversed.) OUTPUT Switching Time Test Circuit ■ Typical Characterisitics IC -- VCE --10 --20 --30 --40 --50 IB=0 --0.5mA--0.4mA --0.3mA --0.2mA --0.1mA Collector Current, IC – mA Collector-to-Emitter Voltage, VCE – V IC -- VBE --10 --20 --30 --40 --50 VCE=--5V Collector Current, IC – mA Base-to-Emitter Voltage, VBE – V 1000 100 hFE -- IC

7 VCE=--5V

DC Current Gain, hFE Collector Current, IC – mA 7 --10 2 3--1.0 532 75 --100 2 1.0 Cob -- VCB f=1MHz Output Capacitance, Cob – pF Collector-to-Base Voltage, VCB V-- PNP Transistors 2SA1257-HF

www.kexin.com.cn 3 Transistors ■ Typical Characterisitics --1.0 332 5 7 --10 7 --10052 100 T C VCE=--10V Gain-Bandwidth Product, fT – MHz Collector Current, IC – mA VCE(sat) -- IC 5 7 --10 2--1.0 32 753 --100 --0.1 --1.0 IC / IB=10 Collector Current, IC – mA Collector-to-Emitter Saturation Voltage, VCE(sat) – V VBE(sat) -- IC 5 7 --10 2--1.0 32 753 --100 --1.0 --10 IC / IB=10 Collector Current, IC – mA Collector-to-Base Saturation Voltage, VBE(sat) – V 0 20 40 60 80 100 120 1400 100 250 150 200 300 PC -- Ta Collector Dissipation, PC – mW Ambient Temperature, Ta – ˚C f -- I PNP Transistors 2SA1257-HF