2SA1256_15 KEXIN

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High fT (230MHz typ), and small Cre (1.1pF typ). Small NF (2.5dB typ). Absolute Maximum Ratings Ta = 25 tinUgnitaRlobmySretemaraP Vegatlovesab-rotcelloC CBO -30 V Vegatlovrettime-rotcelloC CEO -20 V Vegatlovesab-rettimE EBO -5 V ItnerrucrotcelloC C -30 mA PnoitapissidrotcelloC C 150 mW TerutarepmetnoitcnuJ j 125 TerutarepmetegarotS stg -55 to +125 PNP Transistors 2SA1256 ■ Electrical Characteristics Ta = 25℃ ■ Classification of hfe Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -30 Collector- emitter breakdown voltage VCEO Ic= -1 mA， IB=0 -20 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -5 Collector-base cut-off current ICBO VCB= -10 V , IE=0 -100 Emitter cut-off current IEBO VEB= -4V , IC=0 -100 Collector-emitter saturation voltage VCE(sat) IC=-20 mA, IB=-1mA 0.5 Base-emitter saturation voltage VBE(sat) IC=-20 mA, IB=-1mA 1.2 DC current gain hFE VCE= -6V, IC= -1mA 60 270 Noise figure NF 2.5 Voltage gain PG 22 Base-collector time constant rbb,Cc VCE= -6V, IC= -1mA,f=31.9MHz 11 20 ps Collector output capacitance Cre VCB= -6V, f=10MHz 1.1 1.7 pF Transition frequency fT VCE= -6V, IC= -1mA 150 230 MHz V nA dB VCE= -6V, IC= -1mA,f=100MHz V Type 2SA1256-E3 2SA1256-E4 2SA1256-E5 Range 60-120 90-180 135-270 Marking E3 E4 E5 0.4+0.1 -0.1 2.9+0.1 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.1 2.4+0.1 -0.1 1.3+0.1 -0.1 0-0.1 0.38+0.1 -0.1 0.97+0.1 -0.1 0.55 0.4 1.Base 2.Emitter 3.collector 1 2 Unit: mmSOT-23 0.1+0.05 -0.01

www.kexin.com.cn2 Transistors ■ Typical Characterisitics PNP Transistors 2SA1256 IC -- VCE --2 --4 --6 --8 --10 IB=0 IB -- VBE --20 --40 --60 --80 --100 VCE=--6V --70µA --60µA --50µA --40µA --30µA --20µA --10µA 1000 100 hFE -- IC 2 3 5 7 3 72 5 3 52--0.1 --1.0 --10 VCE=--12V --3V --6V --1.0 332 5 7 --10 52 100 1000 fT -- IC VCE=--12V --3V --6V VCE=--3V --12V --6V 7 --1.0 2 3--0.1 332 5 75 --10 52 1.0 Cre -- VCB f=1MHz 7 --1.0 2 3--0.1 332 5 75 --10 52 100 rbb' Cc -- IC f=31.9MHz Collector Current, IC – mA Collector-to-Emitter Voltage, VCE – V Collector-to-Base Voltage, VCB – V Base Current, IB – ∝A Base-to-Emitter Voltage, VBE – V DC Current Gain, hFEReverse Transfer Capacitance, Cre – pF Base-to-Collector Time Constant,rbb 'Cc – ps Collector Current, IC I,tnerruC rotcelloCAm– C – mA Collector Current, IC – mA Gain-Bandwidth Product, fT – MHz

www.kexin.com.cn 3 Transistors PNP Transistors 2SA1256 ■ Typical Characterisitics VCE(sat) -- IC 5 7 --1.0 2--0.1 32 5353 7 --10 2 --0.1 --1.0 --10 IC / IB=20 0 20 40 60 80 100 120 140 160 120 150 200 PC -- Ta Collector Current, IC – mA Collector-to-Emitter Saturation Voltage, VCE(sat) – V Collector Dissipation, PC – mW Ambient Temperature, Ta – ˚C Input Admittance, yie -- IC gie -- mS 0.1 1.0 cie -- pF 100 f=1.0MHz VCE=--6V cie gie Input Admittance, yie -- IC gie -- mS 1.0 cie -- pF 100 f=10MHz VCE=--6V cie gie Input Admittance, yie -- IC gie -- mS 100 cie -- pF 1.0 100 Output Admittance, yoe -- IC goe -- µS coe -- pF 1.0 f=1.0MHz VCE=--6V coe goe Output Admittance, yoe -- IC goe -- µS 100 coe -- pF 1.0 100 f=10MHz VCE=--6V coe goe Output Admittance, yoe -- IC goe -- mS 1.0 coe -- pF 0.1 1.0 f=100MHz VCE=--6V coe goe f=100MHz VCE=--6V cie gie Collector Current, IC I,tnerruC rotcelloCAm– C – mA Collector Current, IC I,tnerruC rotcelloCAm– C – mA Collector Current, IC I,tnerruC rotcelloCAm– C – mA

www.kexin.com.cn4 Transistors ■ Typical Characterisitics PNP Transistors 2SA1256 Forward Transfer Admittance, yfe -- IC gfe -- mS --1.07 --1072 3 53 5 100 100 gfe --bfe bfe -- mS f=100MHz VCE=--6V Reverse Transfer Admittance, yre -- IC gre -- mS --1.07 --1072 3 53 5 1.0 0.1 0.1 1.0 --gre --cre cre -- pF f=100MHz VCE=--6V Collector Current, IC I,tnerruC rotcelloCAm– C – mA PG, NF -- ID --1.05 7 --1072 3 53 PG NF See specified Test Circuit. f=100MHz VCE=--6V Input Admittance, yie -- VCE gie -- mS cie -- pF 1.0 Output Admittance, yoe -- VCE goe -- mS 1.0 coe -- pF 0.1 1.0 coe goe f=100MHz IC=--1.0mA f=100MHz IC=--1.0mA cie gie Forward Transfer Admittance, yfe -- VCE gfe -- mS bfe -- mS 1.0 Reverse Transfer Admittance, yre -- VCE gre -- mS 0.1 1.0 cre -- pF 0.1 1.0 --cre --gre f=100MHz IC=--1.0mA f=100MHz IC=--1.0mA --bfe gfe Collector-to-Emitter Voltage, VCE V,egatloV rettimE-ot-rotcelloCV– CE – V Collector-to-Emitter Voltage, VCE V,egatloV rettimE-ot-rotcelloCV– CE – V Collector Current, IC – mA Power Gain, PG – dB Noise Figure, NF – dB