2SA1256 SANYO
Document overview
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Technical content
Features
: High fp (230MHz typ), and small Cre (1.1pF typ). + Small NF (2.5dB typ). Absolute Maximum Ratings at Ta =25°C unit Collector-to-Base Voltage Voso —30 Vv Collector-to-Emitter Voltage Vcro —20 Vv Emitter-to-Base Voltage VEBO —5 v Collector Current Ig -30 mA Collector Dissipation Po 150 Ww Junction Temperature Tj 125 °C Storage Temperature Tstg —55 to +125 °C Electrical Characteristics at Ta=25°C min typ max unit Collector Cutoff Current Icgo —- Vcp=—10V, Ip=0 01 pA Emitter Cutoff Current Izpo Vep=—4V,Ic=0 -0.1 pA DC Current Gain hrE Vce=—6V,Io=—1mA 60% 270% Gain-Bandwidth Product fp Vop=—6V, Io= —1mA 150 230 MHz Reverse Transfer Capacitance Cre Vop=—6V, f=1MHz 1.1 00641.7) pF Base-to-Collector Time Constant rpp’Ce Vee=—6V,Ic=—1mA, 11 20 ps f=31.9MHz Noise Figure NF Vog=—6V, Ic=—1mA, 2.5 dB f=100MHz Voltage Gain PG Ver=—6V,Ic=—1mA, 22 dB f=100MHz % : The 2SA1256 is classified by mA hyg as follows: [eo £3 120 | 90 e4 180 [195 €5 180 Note) Marking : E hpg rank : 3, 4,5 NF, PG Test Circuit »PG Test Circui Package Dimensions 2018B A «ory (unit:mm) 4 : ie = CE 3 INPUT 500. a (WW ~ Tt ~30P S C) | AN © Su | ontaT 28 e i A 0.01y ~22p ~22 “0p T a bo. in| ; nea [Foes Ve a 1: Bose Unit (Capacitance : F) 3 Golhenee L1; Lmmg plated wire 10mmp ST, tap : 2T from Vpg side tL} SANYO: CI L2:immg plated wire 10mmg 7, tap: 17 from von side Oe SARVOCCE L3; Lmmg enamel wire 10mmg 8T SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg.,1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 40196TS (KOTO) 8-4689/3187AT/D064MW/8182KI, TS No.1056-1/4
28A1256 — pee | Ic - Ve } a : fF ni (CES SS | [_ ! 7 2-60 : ——— i af : i 5 ot ° oe En itter Voltage, ° sollector-to-Emitter Voltage, Voy — V ~ = : 7 0 are a ——— r = ‘ > bP a =e = =e LH = ea : PT] tt IN HAH rt H tt | See pe x
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: ann Ty TTT} = 3 an i. HHH 3 . oe Po ie tH ar +H Peo = HEA a "eels | as _ Sooo 7 i . ee — -01 Collector Vea 7 ) aa = a HH H 2 | LL ET = TTI I! | eran 4 | Eee PN | aiaice tH poets 3 [ee a Fes $10 an Prt = : —T Cero 7 : Se : | seairetets A . aa 122, currents 2a Pe i} a : aS inte se Voltage,Von — V . Pr H+ HH > | Bee |. TT ’ To [ [TT a .” Sonmsinniee H 4s be et : | —- 7 2" r++ +++ +4 fs : aan cee 7 7 rs 7 pees — || i Ol | enmnipee Zan CEs | |
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° Pee mN ~ EER et |_| 7 Ly Tho a. “oa Collector Current,
Input Admittance, yie — Ic Output Admittance, yoe — Ic 5 ; T=10MHa? 5 rt. T=1OMHz ‘0 Ff 1 | acti, oes a iT" J ro te. all | aan ea oe a ee $8 O4 4 10 _~ ARETE [7 | "| aa 4 TI] LE? j LI = 10 -10 "0 -10 a0. Collector Current,Ig — mA Collector Current, ~ mA . Input Admittance, yie — Ic Output Admittance, yoe — Ic rll] T=10MHe | ‘0 F=T0Mitz es Pa : [L__ ton ‘Neee-ev—| 4 if {fT 4 ee as 4: Vr Oe See” ee ee 3} <p b 3 3 Cae, FEE on =10 Zo ° 10 =10 2 ="? Collector Current,Ig — mA Collector Current,I¢ — mA .
120 Input Admittance, yie — Ic © 5 Output Admittance, yoe — Ic 5
a rll... ens [Voces = 892 TCE ES ce= ~6V\\, pet LT. D7 ieee rn Z| | HH t+—-H : pst ee KH et At Ti 1.0 <1 To z $ =e ro) O15 5 ne =" Collector Current,[g — mA Collector Current,Ig - mA Forward Transfer Admittance, yfe — Ic sReverse Transfer Admittance, yre = Ic, = f= z: 0 900 = cre ee no ae A a 0 oe a a = A a IO r eee es i 1 0 <4 10 i a ae a (eee ae ; a ll a ee eee a ay oT 0 ky 3s 7? <9 xy 1.0 7 E) ae Collector Current,I, — mA. Collector Current,Jg — mA No.1056-3/4
5 Input Admittance, yie — Vee 5 © Output Admittance, yoe — Vce 0
[Lf eee ee 5) Ic= ~1.0mAy fo Io= ~1.0mA\\ +} 1, , pe tp ee eee a ee 1 140 hol : pot es gs Pe a a LS > ee fy 3 2 T 410 -0 =1.0 3 —0 Collector-to-Emitter Voltage, Voz — V Collector-to-Emitter Voltage, Voz — V Forward Transfer Admittance, yfe — Vee Reverse Transfer Admittance, yre — Vee 5 5 5 T=100MAz T=100MHz 2 - n 10 10 an J 02 24 SS 7 s ae Fel a 17 114 i a an es GO ee : Poo] a a SO a | re ee | i ee pd] 10 10 5 + T L090 2 3 =10 =10 2 EJ -10 2 Collector-to-Emitter Voltage, Vez — V Collector-to-Emitter Voltage,Vcg — V PG,NF = Ic : a 2 : ——— S See specified Test Cireuit, 1 f=100MHz pw Vop=—6V Be EL Ey Bett) te & 20 6a F — 2 3 =1.0, =" a Collector Current,lo — mA No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/orime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. @ Anyone purchasing any products described or contained herein for an above-mentioned use shalt ® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO,, LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: ® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD. its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. WM Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production, SANYO believes information herein is accurate and reliable, but no guarantees er gual are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of April, 1996, Specifications and information herein are subject to change without notice, No.1411-4/4