2SA1254 PANASONIC

Document overview

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Technical content

Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC2206 n Features l High transition frequency fT. l Low collector to emitter saturation voltage VCE(sat). l M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. n Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature 1:Base 2:Collector EIAJ:SC–71 3:Emitter M Type Mold Package 6.9–0.1 1.0–0.1 1.0 2.5–0.1 1.0 1.5 1.5 R0.9 R0.9 R0.7 0.4 0.85 4.1–0.2 4.5 –0.1 2.5 2.5 123 Symbol V CBO V CEO V EBO ICP IC PC Tj Tstg Ratings –30 –20 –60 –30 400 150 –55 ~ +150 Unit V V V mA mA mW n Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Transition frequency Collector to emitter saturation voltage Base to emitter voltage Noise figure Reverse transfer impedance Common emitter reverse transfer capacitance Symbol ICBO ICEO IEBO hFE * fT V CE(sat) V BE NF Zrb C re Conditions V CB = –10V, IE = 0 V CE = –20V , IB = 0 V EB = –5V , IC = 0 V CE = –10V , IC = –1mA V CB = –10V , IE = 1mA, f = 200MHz IC = –10mA, IB = –1mA V CE = –10V , IC = –1mA V CB = –10V , IE = 1mA, f = 5MHz V CB = –10V , IE = 1mA, f = 2MHz V CE = –10V , IC = –1mA, f = 10.7MHz min 150 typ 300 – 0.1 – 0.7 2.8 1.2 max – 0.1 –100 –10 220 4.0 2.0 Unit mA mA mA MHz V V dB W pF *hFE Rank classification Rank B C hFE 70 ~ 140 110 ~ 220

0 160 40 120 80 14020 100 60 500 400 300 200 100 450 350 250 150 Ambient temperature Ta (˚C) Collector power dissipation PC (mW ) –30 –25 –20 –15 –10 Ta=25˚C IB=–250mA –200mA –150mA –100mA –50mA Collector to emitter voltage VCE (V) Collector current IC (mA ) – 0.01 – 0.03 – 0.1 – 0.3 –10 –30 –100 IC /IB=10 Ta=75˚C 25˚C –25˚C Collector current IC (mA ) Collector to emitter saturation voltage VCE(sat) (V) –120 –100 –80 –60 –40 –20 VCE =–10V Ta=75˚C 25˚C –25˚C Collector current IC (mA ) Forward current transfer ratio hFE f=1MHz IE=0 Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) IC =–1mA f=10.7MHz Ta=25˚C Collector to emitter voltage VCE (V) Common emitter reverse transfer capacitance Cre (pF) 0.1 1 10 1000.3 3 30 600 500 400 300 200 100 VCB =–10V Ta=25˚C Emitter current IE (mA ) Transition frequency fT (MHz ) VCE =–10V f=100MHz Ta=25˚C Collector current IC (mA ) Power gain PG (dB) 0.1 0.3 1 3 10 VCB =–10V f=100MHz Ta=25˚C Emitter current IE (mA ) Noise figure NF (dB) PC —T a I C —V CE V CE(sat)—I C hFE —I C C ob —V CB C re —V CE fT —I E PG —I C NF — IE