2SA1252_15 KEXIN

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  • Manufacturer or author: Provided By digicamel.com
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High VEBO. Wide ASO and high durability against breakdown. Electrical Characteristics Ta = 25 Absolute Maximum Ratings Ta = 25 tinUgnitaRlobmySretemaraP Vegatlovesab-rotcelloC CBO -60 V Vegatlovrettime-rotcelloC CEO -50 V Vegatlovesab-rettimE EBO -15 V ItnerrucrotcelloC C -150 mA I)eslup(tnerrucrotcelloC CP -300 mA PnoitapissidrotcelloC C 200 mW TerutarepmetnoitcmuJ j 125 TerutarepmetegarotS stg -55 to +125 PNP Transistors 2SA1252 Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -60 Collector- emitter breakdown voltage VCEO Ic= -1 mA， IC=0 -50 Emitter - base breakdown voltage VEBO IE= -100μA， IB = 0 -15 Collector-base cut-off current ICBO VCB= -40 V , IE=0 -0.1 Emitter cut-off current IEBO VEB= -10V , IC=0 -0.1 Collector-emitter saturation voltage VCE(sat) IC=-50 mA, IB=-5mA -0.5 Base-emitter saturation voltage VBE(sat) IC=-50 mA, IB=-5mA -1.2 DC forward current gain hFE VCE= -6V, IC= -1mA 90 600 Collector output capacitance Cob VCB= -6V, f=1MHz 3.5 pF Transition frequency fT VCE= -6V, IC= -1mA 100 MHz V uA V ■ Classification of hfe

  • Complementary to 2SC3134 Type 2SA1252-D4 2SA1252-D5 2SA1252-D6 2SA1252-D7 Range 90-180 135-270 200-400 300-600 Marking D4 D5 D6 D7 0.4+0.1 -0.1 2.9+0.1 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.1 2.4+0.1 -0.1 1.3+0.1 -0.1 0-0.1 0.38+0.1 -0.1 0.97+0.1 -0.1 0.55 0.4 1.Base 2.Emitter 3.collector 1 2 Unit: mmSOT-23 0.1+0.05 -0.01

www.kexin.com.cn2 Transistors 2SA1252 ■ Typical Characterisitics I C VCE --10 --20 --30 --40 --50 IB=0 --200µA --150µA --100µA --50µA --250µA 2SA1252 From top --500µA --450µA --400µA --350µA --300µA IC -- VCE --4 --8 --12 --16 --20 IB=0 --70µA 2SA1252 --60µA --50µA --40µA --30µA --20µA --10µA IC -- VBE --20 --40 --60 --80 --100 2SA1252 VCE=--6V Pulse Collector Current, IC – mA Collector-to-Emitter Voltage, VCE – V Collector Current, IC – mA Collector-to-Emitter Voltage, VCE – V Collector Current, IC – mA Base-to-Emitter Voltage, VBE – V 1000 100 hFE -- IC 2SA1252 VCE=--6V Pulse DC Current Gain, hFE Collector Current, IC – mA 7 --1.0 332 5 7 --10 5 7 --100 2210 100 1000 fT -- IC 2SA1252 VCE=--6V Pulse 7 --1.0 332 5 75 --10 5 7 --10021.0 Cob -- VCB 2SA1252 f=1MHz Gain-Bandwidth Product, fT – MHz Collector Current, IC – mA Output Capacitance, Cob – pF Collector-to-Base Voltage, VCB -- V VCE(sat) -- IC 5 7 --10 2--1.0 32 753 --100 2 --0.1 --1.0 2SA1252 IC / IB=10 Collector Current, IC – mA Collector-to-Emitter Saturation Voltage, VCE(sat) – V 0 20 40 60 80 100 120 140 200 120 160 240 PC -- Ta 2SA1252 Collector Dissipation, PC – mW Ambient Temperature, Ta – ˚C