2SA1244 ISC
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark1 iscSiliconPNPPowerTransistor 2SA1244
DESCRIPTION
- WithTO-251(IPAK)packaging
- High speedswitchingtime
- Lowcollectorsaturation voltage
- Complementtotype 2SC3074
- Minimum Lot-to-Lotvariationsforrobustdevice performanceandreliable operation
APPLICATIONS
- Medium power dissipation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-BaseVoltage -60 V VCEO Collector-EmitterVoltage -50 V VEBO Emitter-BaseVoltage -5 V IC CollectorCurrent-Continuous -5 A IB BaseCurrent -1 A PC CollectorPowerDissipation @TC=25℃ 20 W TJ JunctionTemperature 150 ℃ Tstg StorageTemperatureRange -55~150 ℃
isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark2 iscSiliconPNPPowerTransistor 2SA1244 ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-EmitterSaturationVoltage IC=-3A;IB=-0.15A -0.4 V VBE(sat) Base-EmitterSaturationVoltage IC=-3A;IB=-0.15A -1.2 V V(BR)CEO Collector-EmitterBreakdownVoltage IC=-10mA;IB=0 -50 V ICBO CollectorCutoffCurrent VCB=-50V;IE=0 -1.0 μA IEBO EmitterCutoffCurrent VEB=-5V;IC=0 -1.0 μA hFE1 DCCurrentGain IC=-1A;VCE=-1V 70 240 hFE1 DCCurrentGain IC=-3A;VCE=-1V 30 hFE1 Classifications O Y 70-140 120-240