2SA1244 TOSHIBA
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TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS Unit in mm samax, 3 i 522021 3 0.6MAx. @ Low Collector Saturation Voltage = i : VCK(sat) = —0.4 V (Max.) at Ic = -3A 3 © High Speed Switching Time : tetg = 1.0 us (Typ.) osto.s st 0.95Max. z oeMax. @ Complementary to 2SC3074 Ey i]
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MAXIMUM RATINGS (Ta = 25°C) a|_42 b= = =z CHARACTERISTIC SYMBOL (8) x . 68MAX., | Collector Base Voltage Vono_| 0 | Vv peal] ye Collector-Emitter Voltage VcCEO ~ A Emitter-Base Voltage VEBO [ -5 | v | 3 3] 2 Collector Power —-[TH= 25°C] 5 w m4, Dissipation Te = 25°C ={"|3 Storage Temperature Range ‘stg 55~150 Cc Fe EAE INR) 3. EMITTER JEDEC _ TOSHIBA (A)2-7B1A_(B) 2-7B2A Weight : 0.36 g 961001544 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual Property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1999-06-16 1/4
ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current Topo [Von = —50V, Ip =0 r—-|l— | A] Emitter Cutoff Curent | Inpo _|Vap= SV, Io =0 P= =a] Collector-Emitter FE (1) = = DC Current Gain (ote) |VCE= —~1V, Ic= -1A 7 240 Saturation |Collector-Emitter | VCR (sat) [Ic = —3A, Ip = —0.15A | — | -0.2 | -0.4 | = Vv Voltage Ic==3A,Ip=—015A | — [-09]-12| Transition Frequency Von=-4V,Ig=-1A_ | — | 60] — | Mma| . Vos = —10V, Ip =0, Collector Output Capacitance Cob f=1MHz 170 pF HS S Switching . Ip2 Tai é Time Storage Time tstg mi bY us —Ipi = Ipe = 0.15A =_ ravnoe [we [attests [= [ol Note : hrR(1) Classification 0: 70~140 Y : 120~240 1999-06-16 2/4
a Ic - VCE “a0 Vcr - Ic EES ,. 7S Z ape te = 250 8 oat | Ip = —60mA Te = 25°C 8 a g [| f | vc /] ZA 150 . |Areis [ld : Beenvavewsa § | fees nan Bs -06 tf F200 2 | pa a ELT A AZZ (CCT ob ee sy - 8 eer tt Oe Ay COLLECTOR-EMITTER VOLTAGE Vcg (V) COLLECTOR CURRENT Ig (A) - Vor ~ Ie - Vor ~ Ic “TELL gives “TTT TL eeaigs S yg LT [te=-coma | _ tem soo S yg tT te=-eoma] | te=-ser0 I gs TTS Be -oal LA AL Be 00 ae See ELLA PP a0 Be LOTTA Ft A MMA co a jt A A e LAA 2 HAA | 5 | WL 8 wl | eer
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Ao titi ti ty MATT Titi ttt a a COLLECTOR CURRENT Ig (A) COLLECTOR CURRENT Ig (A) - VCE(sat) — IC nee ett eM | omens Ea common emrrrer BREESE EH to/ty = 20 goo HE vor -1v Be ER = cd ot 83-9 — — BT tooo tH TTT a8 ost UM TT . {te aus iw ||| e LU TT aii) ES 6 ss SS a5 re= 1000] Le a of HH BS 04a is) oc A a a oo LEE TTT Pe 8 oe or ost CT) COLLECTOR CURRENT Ig (A) COLLECTOR CURRENT Ig (A) 7999-06-16 3/4
i" VBE (sat) — IC Ic - VBE ZS testa = 20 g I Vor = -1V Ss ‘CE ge _ CUI on ey ee | es 0 | » LLL_UPET TT TT Te aU) ee] |) EEE a Pa er 8 Te = 100°C iS See So ASS z ipa i a | £ CAT PT TET #2 aa et at 8 ECAC EE Ei PE Pt PT oe a y ze ey ae COLLECTOR CURRENT Ig (A) BASE-EMITTER VOLTAGE Vpe (V) SAFE OPERATING AREA Pc - Ta = 0 28 Fo Lt o tan A SN tees HEE gs atta INFINITE HEAT SINK -3 fic max conisuous TANT fl E of ® CERAMIC SUBSTRATE z CIN ons 1] EPO E eT] ® ceramic sunsn 2 || |] |IIoe omseanos A NY ||| 2 FEENE 2 sommarsinn © ee ee MAH a. NEL ® g SS SS Ee eH SSE a ee eo ttt TT ING TTT Tt Er eae AN Ee eee ALLL 8 to NY anit — ,OO ONT ELIT TTT NTI 8 COON 3 005] Puna tee a5" aera & a eee 8 ie = 25°C ron Re ENT 0.03] CURVES MUST BEDERATED || THT! Dann T0160 LINEARLY WITH INCREASE Py InN TEMPERATURE. Vogo MAX. (I AMBIENT TEMPERATURE Ta (C) COLLECTOR-EMITTER VOLTAGE Veg (V) 1999-06-16 4/4