2SA1244_15 KEXIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
www.kexin.com.cn 1 Tran sistors PNP Transistors 2SA1244 ■ Features
- Low collector saturation voltage
- High speed switching time: tstg = 1.0 μs (typ.)
- Complementary to 2SC3074 1 2 3 Unit: mm TO-251 1 2 3
1 Base
2 Collector
3 Emitter
■ Absolute Maximum Ratings Ta = 25℃ Symbol Rating Unit VCBO -60 VCEO -50 VEBO -5 IC -5 IB -1 Ta = 25°C 1 Tc = 25°C 20 TJ 150 Tstg -55 to 150 Emitter - Base Voltage Collector - Emitter Voltage Collector - Base Voltage Junction Temperature Storage Temperature Range Parameter PC W V A Collector Power Dissipation Base current Collector Current - Continuous ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 μA， IE= 0 -60 Collector- emitter breakdown voltage VCEO Ic= 10 mA， IB= 0 -50 Emitter - base breakdown voltage VEBO IE= 100μA， IC= 0 -5 Collector-base cut-off current ICBO VCB= -50 V , IE= 0 -1 Emitter cut-off current IEBO VEB= -5V , IC=0 -1 Collector-emitter saturation voltage VCE(sat) IC=-3 A, IB=-150mA -0.4 Base - emitter saturation voltage VBE(sat) IC=-3 A, IB=-150mA -1.2 hFE(1) VCE= -1V, IC= -1 A 70 240 hFE(2) VCE= -1V, IC= -3 A 30 Turn-on time ton 0.1 Storage time tstg 1 Fall time tf 0.1 Collector output capacitance Cob VCB= -10V, IE= 0,f=1MHz 170 pF Transition frequency fT VCE=- 4V, IC= -1 A 60 MHz V uA uS DC current gain V −IB1 = IB2 = 0.15 A, DUTY CYCLE ≤ 1% 20 μs INPUT IB2 IB1 OUTPUT VCC = −30 V IB1 10 Ω IB2
www.kexin.com.cn2 Transistors PNP Transistors 2SA1244 ■ Classification of hfe(1) Type 2SA1244-O 2SA1244-O Range 70-140 120-240 ■ Typical Characterisitics Collector-emitter voltage VCE (V) IC – VCE Collector current IC (A) Collector-emitter voltage VCE (V) VCE – IC Collector current IC (A) Collector-emitter voltage VCE (V) Collector current IC (A) VCE – IC Collector-emitter voltage VCE (V) VCE – IC Collector current IC (A) DC current gain hFE Collector current IC (A) hFE – IC Collector current IC (A) VCE (sat) – IC Collector-emitter saturation voltage VCE (sat) (V) −1.0 −0.2 IB = −60 mA −0.4 −0.6 −0.8 −30 −100 −350 −400 −300 −10 −200 −150 −500 Common emitter Tc = 25°C Common emitter Tc = 25°C IB = −10 mA −2 −4 −6 −8 −50 −20 −60 −70 −40 −30 −80 Common emitter Tc = −55°C −1.0 −0.2 IB = −60 mA −0.4 −0.6 −0.8 −200 −80−40 −300 −500 −100 −150 −20 −400 −1.0 −0.2 IB = −60 mA −0.4 −0.6 −0.8 −350 −300 −100 −20 −400 −500 −250 −200 −40 −150 Common emitter Tc = 100°C −0.03 1000 Common emitter VCE = −1 V 500 300 100 Tc = 100°C −55 −0.03 −0.03 Common emitter IC/IB = 20 −0.5 −0.3 −0.1 −0.05 Tc = 100°C −55
www.kexin.com.cn 3 Transistors PNP Transistors 2SA1244 ■ Typical Characterisitics Collector current IC (A) VBE (sat) – IC Base-emitter saturation voltage VBE (sat) (V) Base-emitter voltage VBE (V) IC – VBE Collector current IC (A) Collector-emitter voltage VCE (V) Safe Operating Area Collector current IC (A) Ambient temperature Ta (°C) PC – Ta Collector power dissipation PC (W) −0.1 −0.03 Common emitter IC/IB = 20 100 Tc = −55°C −10 −0.3 −0.5 Common emitter VCE = −1 V −55 Tc = 100°C *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. −0.01 −0.1 −10 IC max (continuous) IC max (pulsed)* VCEO max 1 ms* 10 ms* DC operation Tc = 25°C −0.03 −0.05 −0.1 −0.3 −0.5 (1) Tc = Ta infinite heat sink (2) Ceramic substrate 50 × 50 × 0.8 mm (3) No heat sink 20 40 60 80 100 120 160 20 (1) (2) (3) 140